hsms-281e Avago Technologies, hsms-281e Datasheet - Page 2

• Manufacturer Part Number: hsms-281e
• Description: Surface?mount?rf?schottky?barrier?diodes
• Manufacturer: Avago Technologies

Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Notes:
1. ∆V
2. ∆C
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance. ”
5. R
2
Electrical Specifications T
Symbol
I
P
T
T
θ
f
Number Marking Lead
stg
j
IV
jc
HSMS
Test Conditions
2810
2812
2813
2814
2815
2817
2818
281B
281C
281K
281E
281F
281L
D
Part
C
F
TO
= R
= +25°C, where T
for diodes in pairs and quads in 15 mV maximum at 1 mA.
for diodes in pairs and quads is 0.2 pF maximum.
[4]
S
+ 5.2 Ω at 25°C and I
Package
Code
B0
B2
B3
B4
B5
B7
B8
B0
B2
B3
B4
BK
BL
Parameter
Forward Current (1 μs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Code Configuration
B
C
K
0
2
3
4
5
7
8
E
F
L
f
= 5 mA.
C
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
Bridge Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Trio
= 25°C, Single Diode
Unconnected Pair
[1]
T
C
= 25°C
[2]
[4]
[4]
Breakdown
[3]
I
Minimum
R
Voltage
V
= 10 mA
BR
20
(V)
Unit
Amp
V
°C
°C
°C/W
Maximum
I
F
Forward
Voltage
V
= 1 mA
F
410
(mV)
Maximum
1.0
Forward
Voltage
V
I
F
F
(mA)
(V) @
SOT-23/SOT-143
1
Same as V
150
‑65 to 150
500
35
200
Maximum
Leakage
I
Reverse
R
V
BR
(nA) @
R
(V)
15
Capacitance
Maximum
f = 1 MHz
V
C
F
T
1.2
SOT-323/SOT-363
1
Same as V
150
‑65 to 150
150
= 0 V
(pF)
Resistance
BR
I
Dynamic
F
R
Typical
= 5 mA
D
15
(Ω)
[5]