si7501dn-t1 Vishay, si7501dn-t1 Datasheet
si7501dn-t1
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si7501dn-t1 Summary of contents
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... V PowerPAK 1212 Bottom View Ordering Information: Si7501DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si7501DN Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-State Resistance ...
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... Q − Total Gate Charge (nC) g Document Number: 72173 S-51129—Rev. C, 13-Jun- 1000 Si7501DN Vishay Siliconix P−CHANNEL Transfer Characteristics −55_C C 25_C − Gate-to-Source Voltage (V) GS ...
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... Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J www.vishay.com 25_C J 1.0 1.2 1.4 75 100 125 150 ...
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... Document Number: 72173 S-51129—Rev. C, 13-Jun-05 −2 − Square Wave Pulse Duration (sec) −3 − Square Wave Pulse Duration (sec) Si7501DN Vishay Siliconix P−CHANNEL Notes Duty Cycle Per Unit Base = R = 65_C/W thJA (t) 3 ...
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... Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru − Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.10 0. 0.04 0.02 0. − Drain Current (A) D Gate Charge 7 ...
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... I D(on) Limited T = 25_C A 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage ( minimum V at which DS(on) Si7501DN Vishay Siliconix N−CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.16 0. 0.04 0. − Gate-to-Source Voltage (V) GS Single Pulse Power −3 − ...
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... Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 −4 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...