k7r321884c Samsung Semiconductor, Inc., k7r321884c Datasheet - Page 13

• Manufacturer Part Number: k7r321884c
• Description: 1mx36-bit, 2mx18 And 4mx9-bit Qdr Ii B4 Sram
• Manufacturer: Samsung Semiconductor, Inc.

THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250Ω and V
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250Ω
K7R323684C
K7R321884C
K7R320984C
Note: For power-up, V
Overershoot Timing
Junction to Ambient
Junction to Case
Junction to Pins
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
Output Power Supply Voltage
Output Timing Reference Level
Core Power Supply Voltage
Input High/Low Level
Input Reference Level
Input Rise/Fall Time
V
V
thermal impedance. T
DDQ
2. Periodically sampled and not 100% tested.
DDQ
+0.25V
V
+0.5V
V
IL
DDQ
Parameter
PRMETER
PRMETER
IH
≤ V
J
DDQ
=T
20% t
A
+0.3V and V
+ P
D
KHKH
x θ
JA
(MIN)
DD
Symbol
V
≤ 1.7V and V
T
V
V
V
IH
R
DDQ
REF
DD
/V
/T
DDQ
F
IL
SYMBOL
=1.5V.
C
C
C
OUT
CLK
IN
DDQ
SYMBOL
1.25/0.25
1Mx36, 2Mx18 & 4Mx9 QDR
1.7~1.9
1.4~1.9
V
0.3/0.3
Value
≤ 1.4V t ≤ 200ms
θ
θ
θ
0.75
DDQ
JA
JC
JB
/2
- 13 -
TESTCONDITION
Undershoot Timing
V
Unit
V
ns
OUT
V
V
V
V
V
IN
=0V
-
V
V
=0V
SS
SS
-0.5V
-0.25V
V
V
AC TEST OUTPUT LOAD
IH
SS
SRAM
TYP
20.8
2.3
4.3
TYP
3.5
V
4
3
ZQ
REF
20% t
Rev. 1.1 August 2006
250Ω
0.75V
MAX
KHKH
4
5
4
(MIN)
TM
Zo=50Ω
°C
°C
°C
Unit
/W
/W
/W
II b4 SRAM
Unit
pF
pF
pF
V
DDQ
NOTES
NOTES
/2
50Ω