cph3448 ON Semiconductor, cph3448 Datasheet - Page 2

• Manufacturer Part Number: cph3448
• Description: N-channel Silicon Mosfet General-purpose Switching Device Applications
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
4.5V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
P.G
0V
PW=10μs
D.C.≤1%
0
0
V IN
0.1
Parameter
V IN
0.2
Drain-to-Source Voltage, V DS -- V
50Ω
G
0.3
I D -- V DS
0.4
V DD =15V
D
S
0.5
I D =2A
R L =7.5Ω
0.6
CPH3448
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V OUT
Symbol
0.7
V GS =1.2V
0.8
1.5V
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =2A
I D =2A, V GS =4.5V
I D =1A, V GS =2.5V
I D =0.5A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =15V, V GS =4.5V, I D =4A
V DS =15V, V GS =4.5V, I D =4A
V DS =15V, V GS =4.5V, I D =4A
I S =4A, V GS =0V
0.9
IT14344
1.0
CPH3448
Conditions
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
Gate-to-Source Voltage, V GS -- V
0.6
min
I D -- V GS
0.8
0.4
30
1.0
Ratings
typ
0.82
430
1.2
3.4
4.7
0.8
1.1
38
51
80
59
38
10
41
36
37
1.4
max
±10
1.6
130
1.3
1.2
50
72
No. A1648-2/4
V DS =10V
1
1.8
IT14345
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
2.0