cph6354 ON Semiconductor, cph6354 Datasheet - Page 2

• Manufacturer Part Number: cph6354
• Description: General-purpose Switching Device Applications
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10V
P.G
0
0
0V
PW=10μs
D.C.≤1%
--0.1
V IN
Parameter
--0.2
Drain-to-Source Voltage, V DS -- V
V IN
--0.3
G
50Ω
--0.4
I D -- V DS
V DD = --30V
--0.5
D
S
--0.6
I D = --2A
R L =15Ω
CPH6354
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
--0.7
V OUT
--0.8
--0.9
I D =- -1mA, V GS =0V
V DS =- -60V, V GS =0V
V GS =±16V, V DS =0V
V DS =- -10V, I D =- -1mA
V DS =- -10V, I D =- -2A
I D =- -2A, V GS =- -10V
I D =- -1A, V GS =- -4.5V
I D =- -1A, V GS =- -4V
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
V DS =--30V, V GS =--10V, I D =--4A
I S =--4A, V GS =0V
IT16614
--1.0
CPH6354
Conditions
--8
--7
--6
--5
--4
--3
--2
--1
0
0
--1
Gate-to-Source Voltage, V GS -- V
--2
min
--1.2
I D -- V GS
--60
--3
Ratings
typ
--0.84
600
103
4.8
5.8
1.6
3.4
60
50
12
78
40
14
77
96
--4
max
--2.6
--1.2
V DS = --10V
±10
100
135
145
--1
No. A1946-2/4
--5
IT16615
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
--6