APT6017JFLL_04 ADPOW [Advanced Power Technology], APT6017JFLL_04 Datasheet - Page 4

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APT6017JFLL_04

Manufacturer Part Number
APT6017JFLL_04
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1400
1200
1000
124
800
600
400
200
50
10
16
12
80
70
60
50
40
30
20
10
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
0
0
1
V
V
R
T
L = 100µH
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
E
diode reverse recovery
LIMITED BY R DS (ON)
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
I
DD
J
J
OPERATION HERE
G
DD
G
ON
D
= 125°C
= 125°C
= 5Ω
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 31A
20
= 400V
= 400V
includes
10
10
Q
g
, TOTAL GATE CHARGE (nC)
V DS = 300V
40
20
20
V DS = 120V
10
E
60
on
I
I
D
D
80
30
30
(A)
(A)
t
d(off)
V DS = 480V
100 120 140 160
40
40
100
t
d(on)
E
off
50
50
600
60
60
100µS
1mS
10mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1,000
1800
1600
1400
1200
1000
100
200
100
800
600
400
200
80
70
60
50
40
30
20
10
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
0
0
1
0.3
0
0
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery
D
DS
SD
J
DD
G
J
DD
ON
= 125°C
= 31A
= 5Ω
= 125°C
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
T J =+150°C
= 400V
= 400V
includes
0.5
10
R
10
10 15 20 25 30
G
, GATE RESISTANCE (Ohms)
0.7
20
20
t
f
I
D
0.9
T J =+25°C
30
(A)
E
on
30
t
r
1.1
40
35 40 45 50
E
off
40
1.3
50
C iss
C oss
C rss
1.5
60
50

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