APTGF75H120TG_10 MICROSEMI [Microsemi Corporation], APTGF75H120TG_10 Datasheet - Page 5

• Manufacturer Part Number: APTGF75H120TG_10
• Description: Full - Bridge NPT IGBT Power Module
• Manufacturer: MICROSEMI [Microsemi Corporation]

Microsemi reserves the right to change, without notice, the specifications and information contained herein
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
90
80
70
60
50
40
30
20
10
0
0
Operating Frequency vs Collector Current
0
0.9
0.05
0.7
0.5
0.1
0.3
switching
hard
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
40
I
C
(A)
ZVS
60
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
www.microsemi.com
=7.5 Ω
=600V
80
0.001
rectangular Pulse Duration (Seconds)
100
Single Pulse
Diode
0.01
125
100
75
50
25
0
0
0.1
APTGF75H120TG
Forward Characteristic of diode
0.5
1
T
V
J
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
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