APTGT300SK60D3G_11 MICROSEMI [Microsemi Corporation], APTGT300SK60D3G_11 Datasheet - Page 4

• Manufacturer Part Number: APTGT300SK60D3G_11
• Description: Buck Chopper Trench + Field Stop IGBT3 Power Module
• Manufacturer: MICROSEMI [Microsemi Corporation]

Typical Performance Curve
500
400
300
200
100
35
30
25
20
15
10
Switching Energy Losses vs Gate Resistance
500
400
300
200
100
5
0
0.16
0.12
0.08
0.04
0
0.2
0.00001
0
0
5
0
V
V
I
T
C
0
J
CE
GE
= 300A
= 150°C
Output Characteristics (V
= 300V
=15V
Eoff
0.9
2.5
0.5
0.7
0.3
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
0.05
Transfert Characteristics
Gate Resistance (ohms)
T
0.5
J
=150°C
5
7
0.0001
1
V
V
7.5
GE
CE
8
(V)
T
(V)
T
J
J
=25°C
=25°C
1.5
10
Eon
9
GE
Er
T
=15V)
12.5
J
2
=150°C
10
Rectangular Pulse Duration in Seconds
0.001
15
2.5
11
Single Pulse
www.microsemi.com
IGBT
0.01
APTGT300SK60D3G
700
600
500
400
300
200
100
25
20
15
10
500
400
300
200
100
5
0
0
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
J
GE
G
= 150°C
=150°C
T
= 2.2Ω
100
=2.2Ω
0.1
100
= 300V
= 15V
=15V
J
0.5
= 150°C
200
200
Output Characteristics
1
V
GE
300
I
1.5
C
=19V
V
300
V
(A)
CE
CE
400
(V)
1
(V)
2
V
400
GE
Eoff
500
=15V
2.5
V
GE
500
V
=13V
Eon
600
GE
3
Er
=9V
10
600
700
3.5
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