RM75TPM-M MITSUBISHI [Mitsubishi Electric Semiconductor], RM75TPM-M Datasheet - Page 2

• Manufacturer Part Number: RM75TPM-M
• Description: DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL AND THERMAL RESISTANCE CHARACTERISTICS
V
V
E
I
I
I
f
T
T
V
I
V
R
R
O
FSM
2 t
RRM
j
stg
RRM
RSM
a
iso
FM
th (j-c)
th (c-f)
Symbol
Symbol
Symbol
—
—
—
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
2 t
for fusing
Parameter
Parameter
Parameter
Three-phase full wave rectifying circuit, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to base plate, f=60Hz, AC 1 minute
Main terminal M5 screw
Mounting M5 screw
Typical value
T
T
Junction to case
Case to heat sink, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
j
j
=150°C, V
=25°C, I
400
480
110
M
FM
RRM
=150A, instantaneous meas.
applied
Conditions
Conditions
2
800
960
220
H
Voltage class
C
=99°C
RM75TPM-M,-H,-24,-2H
1200
1350
370
24
MEDIUM POWER GENERAL USE
MITSUBISHI DIODE MODULES
Min.
10
—
—
—
—
–40~+150
–40~+125
1.47~1.96
1.47~1.96
Ratings
Limits
1500
9380
1000
2500
Typ.
150
200
—
—
—
—
—
1600
1700
440
2H
INSULATED TYPE
Max.
0.13
0.06
1.3
15
—
Feb. 2009
Vrms
Vrms
K/ W
K/ W
Unit
Unit
N·m
N·m
Unit
A
MΩ
mA
Hz
°C
°C
V
V
A
A
g
V
2
s