STT3981_10 SECOS [SeCoS Halbleitertechnologie GmbH], STT3981_10 Datasheet - Page 2

• Manufacturer Part Number: STT3981_10
• Description: P-Channel Enhancement Mode Mos.FET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

010-Feb-2010 Rev. C
ELECTRICAL CHARACTERISTICS
Notes:
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=70℃)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1. Pulse width limited by maximum junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in
Elektronische Bauelemente
Parameter
2
2
2
2
copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.
(T
Symbol Min
R
A
BV
V
T
T
Coss
Crss
Ciss
Q
I
I
DS(ON)
V
Q
= 25°C unless otherwise specified)
GS(th)
Q
d(on)
d(off)
GSS
DSS
g
T
T
SD
gs
gd
DSS
fs
g
r
f
Dynamic
Static
-0.4
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.84 -1.1
0.52
1.02
Typ Max
100
160
260
168
450
50
40
64
60
47
4
6
-
-
-
-
-
P-Channel Enhancement Mode Mos.FET
±100
-1.1
150
210
300
180
-20
7.5
65
60
75
-1
-
-
-
-
-
-
-
-1.6 A, -20 V, RDS(ON) 180 mΩ
Unit
mΩ
nA
nC
uA
nS
pF
V
V
S
V
V
V
V
V
V
V
V
V
V
I
I
V
V
V
I
V
R
R
V
V
f = 1.0 MHz
S
D
D
STT3981
GS
DS
GS
DS
DS
GS
GS
GS
DS
DS
GS
DS
GEN
GS
D
G
L
= -1.0A, V
= -1.9 A
= -1 A
S
= 10 Ω
= 6 Ω
= V
= -20 V, V
= -16 V, V
= -10 V
= -10 V
= 0, I
= ±8 V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -5V, I
= -4.5 V
= 0 V
= -15 V
= -4.5 V
Test Conditions
GS
D
, I
=250 uA
D
D
GS
=250 uA
= -1.9A
D
D
D
GS
GS
= 0V
= -1.9 A
= -1.6 A
= -0.7 A
= 0
= 0
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