DSS5240Y-7 DIODES [Diodes Incorporated], DSS5240Y-7 Datasheet - Page 3

• Manufacturer Part Number: DSS5240Y-7
• Description: 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Turn On Voltage (Note 5)
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS5240Y
Document number: DS31683 Rev. 2 - 2
2.0
1.6
1.2
0.8
0.4
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Characteristic
2
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
4
@T
I = 5mA
I = 2mA
I = 3mA
I = 1mA
B
I = 4mA
B
B
B
B
6
A
= 25°C unless otherwise specified
8
Symbol
V
R
V
BV
BV
BV
V
C
I
I
CE(sat)
CE(sat)
BE(sat)
BE(on)
h
CBO
EBO
t
t
f
on
t
off
t
FE
obo
t
t
CBO
CEO
EBO
T
d
s
r
f
10
www.diodes.com
3 of 6
Min
300
260
210
100
100
-40
-40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
-0.67
Typ
450
380
325
210
-1.0
220
237
195
1,000
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
25
73
27
46
42
900
800
700
600
500
400
300
200
100
0
0.001
Fig. 5 Typical DC Current Gain vs. Collector Current
-0.75
-100
-100
-100
-110
-225
-225
-350
-220
Max
-1.1
-50
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I , COLLECTOR CURRENT (A)
T = 25°C
T = 125°C
T = -55°C
T = 85°C
C
A
A
A
A
0.01
MHz
Unit
mΩ
mV
nA
μA
nA
pF
⎯
ns
ns
ns
ns
ns
ns
T = 150°C
V
V
V
V
V
A
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
CE
CC
= -100μA, I
= -1A, I
= -2A, I
= -500mA, I
= -2A, I
= -100μA, I
= -10mA, I
= -100mA, I
= -500mA, I
= -750mA, I
= -1A, I
= -4V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -30V, I
= -30V, I
= -10V, f = 1.0MHz
= -10V, I
= -10V
0.1
B
B
B
B1
= -50mA
= -200mA
= -200mA
C
C
C
C
C
C
Test Condition
= I
B
E
E
C
= 0
E
C
= -100mA
= -500mA
= -1A
= -2A
= -100mA
B
B
B
B
= 0
= 0
= 0, T
= -50mA, f = 100MHz
B2
= 0
= 0
= -1mA
= -50mA
= -15mA
= -50mA
V
= -50mA
CE
1
A
= -2V
DSS5240Y
= 150°C
© Diodes Incorporated
October 2010
10