IRK IRF [International Rectifier], IRK Datasheet - Page 2

• Manufacturer Part Number: IRK
• Description: SCR / SCR and SCR / DIODE MAGN-A-pak Power Modules
• Manufacturer: IRF [International Rectifier]

IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
2
Voltage Ratings
On-state Conduction
Switching
ELECTRICAL SPECIFICATIONS
V
t
t
t
I
I
I
I
I
V
V
r
r
I
I
T(AV)
T(RMS)
TSM
2
2
H
L
d
r
q
Type number
IRK.170-
IRK.250-
IRK.230-
t1
t2
t
T(TO)1
T(TO)2
TM
t
Typical delay time
Typical rise time
Typical turn-off time
Low level value of threshold voltage
High level value of threshold voltage
Parameters
Maximum average on-state current
@ Case temperature
Maximum RMS on -state current
Maximum peak, one-cycle on-state,
non-repetitive surge current
Maximum I
Maximum I
Low level on-state slope resistance
High level on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
Parameters
2
2
t for fusing
t for fusing
Voltage
Code
04
08
12
14
16
08
12
16
18
20
repetitive peak reverse and
off-state blocking voltage
V
RRM
V
IRK.170 IRK.230 IRK.250
IRK.170 IRK.230 IRK.250
DRM
4300
4500
1310
1000
5100
5350
92.5
84.4
0.89
1.12
1.34
0.96
170
377
131
119
1.60
500
85
1200
1400
1600
1200
1600
1800
2000
800
800
400
V
, maximum
50 - 150
7500
7850
6300
6600
2800
1000
1.03
1.07
230
510
280
256
198
181
1.59
0.77
0.73
1.0
2.0
500
85
8500
7150
7500
3610
1000
8900
0.97
1.00
250
555
361
330
255
233
0.60
0.57
1.44
500
85
V
RSM
KA
Units Conditions
KA
Units Conditions
m
mA Anode supply=12V, initial I
peak reverse voltage
o
V
A
A
A
V
, maximum non-repetitive
C
2
s
s
2
s t = 10ms
s t = 0.1 to 10ms, no voltage reapplied
180
as AC switch
t = 10ms
t = 10ms
t = 8.3ms reapplied
t = 8.3ms reapplied
t = 10ms
t = 8.3ms reapplied
(16.7% x x I
(I > x I
(16.7% x x I
I
Av. power = V
Anode supply=12V, resistive load=1
gate pulse: 10V, 100 s, T
T
Vd = 0,67% V
I
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
t = 8.3ms reapplied
(I > x I
TM
TM
J
= 25
= x I
= 300 A ; -dI/dt=15 A/µs; T
o
1300
1500
1700
1300
1700
1900
2100
500
900
900
conduction, half sine wave
V
o
T (AV)
T (AV)
C, Gate Current=1A dI
T(AV)
No voltage
100% V
No voltage initial T
100% V
), T
), T
, T
T(AV)
T(AV)
T(TO)
DRM
J
J
J
= T
= T
= T
< I < x I
< I < x I
x I
RRM
RRM
J
J
J
max., 180
T(AV)
max.
max.
Sinusoidal half wave,
+ r
T(AV)
T(AV)
J
= 25°C
T
f
x (I
=30A, T
), T
), T
I
o
T(RMS)
RRM
J
conduction
g/dt
J
J
= T
J
@ 130°C
= T
www.irf.com
= T
= T
=1A/µs
I
m A
J
J
J
)
J
DRM
50
50
J
2
=25
max.
max
max ;
max.
max
o
C