MBR2150VG-E1 BCDSEMI [BCD Semiconductor Manufacturing Limited], MBR2150VG-E1 Datasheet - Page 3

• Manufacturer Part Number: MBR2150VG-E1
• Description: HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
• Manufacturer: BCDSEMI [BCD Semiconductor Manufacturing Limited]

Absolute Maximum Ratings (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
1/θ
Recommended Operating Conditions
Jul. 2011 Rev. 1. 1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated V
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature Range (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V
ESD (Machine Model=C)
ESD (Human Body Model=3B)
Parameter
Maximum1Thermal
Resistance
JA
.
Symbol
θ
θ
R
JL
JA
)
Junction to Lead
Junction1to1Ambient
R
, T
C
=TBD)
3
Condition
Symbol
DO-214AC
DO-15
DO-214AC
DO-15
V
V
I
dv/dt
T
I
F(AV)
V
FSM
RWM
T
RRM
STG
BCD Semiconductor Manufacturing Limited
R
J
-65 to 150
-65 to 150
Value
10000
8000
150
400
75
2
Value
23
90
80
Data Sheet
MBR2150
Unit
V/μs
Unit
°C/W
°C
°C
V
A
A
V
V
D
/dT
J
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