CM600DY-12NF_03 MITSUBISHI [Mitsubishi Electric Semiconductor], CM600DY-12NF_03 Datasheet
CM600DY-12NF_03
Related parts for CM600DY-12NF_03
CM600DY-12NF_03 Summary of contents
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... General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Tc measured point (Base plate) 110 93± 0. C2E1 E2 3-M6 NUTS LABEL CM600DY-12NF HIGH POWER SWITCHING USE ¡I C ................................................................... ¡V CES ............................................................ ¡Insulated Type ¡2-elements in a pack 21.5 4-φ6.5 MOUNTING HOLES 7 18 TAB #110. t=0.5 ...
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... E GE IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to fin, Thermal compound Applied (1/2 module) Tc measured point is just under the chips ) does not exceed T j MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE Ratings Unit 600 ±20 600 1200 (Note 2) 600 (Note 2) 1200 1130 – ...
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... ies 10 C oes C res (V) CE MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 200 400 600 800 1000 ...
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... IGBT part: –2 10 Per unit base = 0.11°C/W th(j–c) 5 FWDi part: 3 Per unit base = 0.18°C/W th(j–c) – CM600DY-12NF – Single Pulse T = 25°C C – – –3 10 – ...