CM1400DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM1400DU-24NF_09 Datasheet - Page 3

• Manufacturer Part Number: CM1400DU-24NF_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
2800
2500
2000
1500
1000
500
10
10
10
COLLECTOR-EMITTER VOLTAGE V
EMITTER-COLLECTOR VOLTAGE V
0
5
4
3
2
1
0
7
5
3
2
7
5
3
2
4
3
2
0
0
0
COLLECTOR-EMITTER SATURATION
15V
V
FORWARD CHARACTERISTICS
GE
VOLTAGE CHARACTERISTICS
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
500
= 15V
2
FREE-WHEEL DIODE
1
13V
1000 1500 2000
V
(TYPICAL)
(TYPICAL)
(TYPICAL)
GE
4
= 20V
2
6
T
T
T
T
T
3
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
j
C
8
= 25°C
8V
(A)
2500 2800
12V
11V
10V
CE
EC
9V
10
(V)
(V)
4
3
2500
2000
1500
1000
500
10
10
10
10
10
10
0
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0
6
COLLECTOR-EMITTER SATURATION
–1
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
V
TRANSFER CHARACTERISTICS
GE
2
CE
VOLTAGE CHARACTERISTICS
8
3 5 7
= 0V
= 10V
4
CAPACITANCE–V
CHARACTERISTICS
10
HIGH POWER SWITCHING USE
10
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
8
12
2
CM1400DU-24NF
3 5 7
14
12
10
16
I
1
C
I
T
T
CE
C
I
T
j
j
C
= 1400A
2
= 25°C
= 125°C
= 2800A
16
j
= 25°C
= 560A
C
GE
GE
C
C
3 5 7
18
oes
ies
res
(V)
(V)
CE
20
10
20
(V)
2
Feb. 2009