CM1400DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM1400DUC-24S Datasheet - Page 7

• Manufacturer Part Number: CM1400DUC-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM1400DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
July-2012
PERFORMANCE CURVES
1000
100
1000
10
100
10
100
100
V
CC
=600 V, V
---------------: T
---------------: T
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT I
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT I
INDUCTIVE LOAD, PER PULSE
V
EMITTER CURRENT I
CC
GE
=600 V, V
=±15 V, R
j
=150 °C,
j
HALF-BRIDGE
=150 °C,
HALF-BRIDGE
(TYPICAL)
(TYPICAL)
1000
GE
G
1000
=±15 V, R
=0 Ω, INDUCTIVE LOAD
- - - -
- - - -
t
t
t
d ( o n )
t
-: T
d ( o f f )
f
r
E
-: T
E
E
o n
o f f
r r
G
j
E
=125 °C
j
=0 Ω,
=125 °C
C
(A)
C
(A)
(A)
10000
10000
10000
1000
100
100
10
1
7
1000
100
10
1000
0.1
100
V
10
CC
0.1
=600 V, I
EXTERNAL GATE RESISTANCE R
EXTERNAL GATE RESISTANCE R
---------------: T
---------------: T
SWITCHING CHARACTERISTICS
V
SWITCHING CHARACTERISTICS
CC
INDUCTIVE LOAD, PER PULSE
C
=600 V, I
=1400 A, V
j
=150 °C,
j
HALF-BRIDGE
=150 °C,
HALF-BRIDGE
(TYPICAL)
C
(TYPICAL)
/I
E
GE
=1400 A, V
1
=±15 V, INDUCTIVE LOAD
- - - -
- - - -
1
-: T
-: T
GE
j
t
t
t
t
=125 °C
j
d ( o n )
r
f
=±15 V,
d ( o f f )
=125 °C
TENTATIVE
E
E
E
o f f
o n
r r
G
G
(Ω)
(Ω)
10
10000
1000
100
10