CM900DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DU-24NF_09 Datasheet
CM900DU-24NF_09
Related parts for CM900DU-24NF_09
CM900DU-24NF_09 Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM A,B HOUSING Type ( Mfg. Co. Ltd VHR- VHR-5N Tc measured point (The side of Cu base plate 8-f6.5 MOUNTING HOLES E2 9-M6 NUTS CM900DU-24NF ● ................................................................... ● V CES .......................................................... ● Insulated Type ● 2-elements in a pack 150 Tc measured point 137.5 ±0.25 42 ...
Page 2
... Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) ) does not exceed MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE Ratings 1200 ±20 900 1800 ...
Page 3
... T = 25° 125° – (V) COLLECTOR-EMITTER VOLTAGE MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE TRANSFER CHARACTERISTICS (TYPICAL 10V 25° 125° GATE-EMITTER VOLTAGE V (V) GE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS ...
Page 4
... GATE CHARGE Conditions 600V CC = ±15V 125° 900A C Inductive load 0.5 4 CM900DU-24NF (TYPICAL Conditions 600V CC = ±15V 0.35Ω 25°C j Inductive load (A) E (TYPICAL 400V CC V ...