L6100200 SEMIKRON [Semikron International], L6100200 Datasheet - Page 12
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L6100200
Manufacturer Part Number
L6100200
Description
SKYPER 32PRO
Manufacturer
SEMIKRON [Semikron International]
Datasheet
1.L6100200.pdf
(16 pages)
SKYPER™ 32PRO -
Adjustment of DSCP
The external components R
monitoring dynamic as well as the blanking time.
High Voltage Diode for DSCP
The high voltage diode blocks the high voltage during IGBT off state. The connection of this diode between driver
and IGBT is shows in the following schematic.
12 / 16
Connection R
Application hints
If the DSCP function is not used, for example during the experimental phase, SEC_TOP_VCE_IN must be connected with
SEC_TOP_GND for disabling SCP @ TOP side and SEC_BOT_VCE_IN must be connected with SEC_BOT_GND for
disabling SCP @ BOT side.
Connection High Voltage Diode
CE
and C
CE
CE
and C
CE
are applied for adjusting the steady-state threshold and the short circuit
Dimensioning of R
R
R
C
Recommended values:
Technical Explanations
CE
CE
CE
2005-06-03 – Rev02
10kΩ < R
C
1200V IGBT: R
1700V IGBT: R
:
for < 1200V IGBT:
for 1700V IGBT :
CE
< 2,7nF
CE
< 100kΩ
Characteristics
A collector series resistance R
connected for 1700V IGBT operation.
CE
CE
CE
=18kΩ, C
=36kΩ, C
Reverse blocking voltage of the diode shall be higher
than the used IGBT.
Reverse recovery time of the fast diode shall be lower
than V
Forward voltage of the diode: 1,5V @ 2mA forward
current (T
and C
R
R
C
CE
CE
CE
CE
CE
CE
CE
rising of the used IGBT.
k (
k (
( )
j
nF
=25°C).
=330pF
=470pF
Ω
Ω
)
)
=
=
=
10
10
10
10
8
8
×
×
+
×
6 ,
2 ,
R
R
V
V
−
−
CEstat
CE
CEstat
CE
V
V
k (
k (
CEstat
CEstat
Ω
Ω
+
+
)
)
18
14
×
VCE
ln
t
bl
⎡
⎢
⎣
15
10
(1kΩ / 0,4W) must be
−
−
© by SEMIKRON
V
V
CEstat
CEstat
(
(
V
V
)
)
⎤
⎥
⎦