CSDD-8M_10 CENTRAL [Central Semiconductor Corp], CSDD-8M_10 Datasheet

CSDD-8M_10

Manufacturer Part Number

CSDD-8M_10

Description

SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS

Manufacturer

CENTRAL [Central Semiconductor Corp]

Datasheet

1.CSDD-8M_10.pdf (2 pages)

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MAXIMUM RATINGS: (T C =25°C unless otherwise noted)

Peak Repetitive Off-State Voltage

RMS On-State Current (T C =90°C)

Peak One Cycle Surge, t=10ms

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Forward Gate Current, tp=10μs

Peak Forward Gate Voltage, tp=10μs

Peak Reverse Gate Voltage, tp=10μs

Critical Rate of Rise of On-State Current

Operating Junction Temperature

Storage Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)

SYMBOL

I DRM, I RRM

I GT

I H

V GT

V TM

dv/dt

t Value for Fusing, t=10ms

SILICON CONTROLLED RECTIFIER

8 AMP, 600 THRU 800 VOLTS

SURFACE MOUNT

TEST CONDITIONS

Rated V DRM, V RRM

Rated V DRM, V RRM, T C =125°C

V D =12V, R L =10Ω

I T =100mA

V D =12V, R L =10Ω

I TM =16A, tp=380μs

V D =

CSDD-8M

CSDD-8N

PAK CASE

V DRM, T C =125°C

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSDD-8M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

V DRM, V RRM

SYMBOL

I T(RMS)

P G(AV)

V FGM

V RGM

I FGM

I TSM

P GM

T stg

Θ JC

di/dt

Θ JA

T J

MIN

200

CSDD-8M

600

TYP

3.0

7.3

0.9

1.3

-40 to +125

-40 to +150

w w w. c e n t r a l s e m i . c o m

8.0

1.0

4.0

5.0

2.5

R2 (17-February 2010)

CSDD-8N

MAX

800

2.0

1.5

1.8

UNITS

°C/W

A/μs

V/μs

°C

μA

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