TC2491 TRANSCOM [Transcom, Inc.], TC2491 Datasheet

TC2491

Manufacturer Part Number

TC2491

Description

0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs

Manufacturer

TRANSCOM [Transcom, Inc.]

Datasheet

1.TC2491.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC2491

Manufacturer:

HITTITE

Quantity:

5 000

Current page: 1 of 3
Download datasheet (105Kb)

FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

Note: * P

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Symbol

PAE

IP3

DSS

1dB

DGO

0.5 W Typical Output Power at 6 GHz

15 dB Typical Linear Power Gain at 6 GHz

High Linearity: IP3 = 37 dBm Typical at 6 GHz

High Power Added Efficiency:

Suitable for High Reliability Application

Breakdown Voltage: BV

Lg = 0.35 m, Wg = 1.2 mm

Tight Vp ranges control

High RF input power handling capability

100 % DC Tested

Flange Ceramic Package

The TC2491 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100%

DC and RF tested to assure consistent quality. Typical applications include high dynamic range power

amplifiers for commercial and military high performance power applications.

** For the tight control of the pinch-off voltage range, we divide TC2491 into 3 model numbers to fit customer design requirement

(1)TC2491P1519 : Vp = -1.5V to -1.9V (2)TC2491P1620 : Vp = -1.6V to -2.0V (3)TC2491P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

Nominal PAE of 40 % at 6 GHz

Output Power at 1dB Gain Compression Point , f = 6GHz V

Linear Power Gain, f = 6GHz V

Intercept Point of the 3

Power Added Efficiency at 1dB Compression Power, f = 6GHz

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

SCL

: Output Power of Single Carrier Level

0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs

-order Intermodulation, f = 6GHz V

DGO

= 2 V, I

= 2 V, V

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

15 V

= 2.4 mA

= 8 V, I

DGO

= 0 V

= 2 V, V

=0.6 mA

CONDITIONS

= 120 mA

=25 C)

Phone: 886-6-5050086

= 0 V

P 1 / 3

= 8 V, I

= 120 mA, *P

= 120 mA

PHOTO ENLARGEMENT

SCL

Fax: 886-6-5051602

= 14 dBm

MIN

26.5

-1.7**

TYP

300

200

REV4_20070507

TC2491

MAX

UNIT

dBm

Volts

C/W

Related parts for TC2491

TC2491 Summary of contents

Page 1

... Output Power of Single Carrier Level SCL ** For the tight control of the pinch-off voltage range, we divide TC2491 into 3 model numbers to fit customer design requirement (1)TC2491P1519 : Vp = -1.5V to -1.9V (2)TC2491P1620 : Vp = -1.6V to -2.0V (3)TC2491P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. ...

Page 2

... S12 5 150 165 -180 -165 -150 - -135 - 0.025 Swp Min 90 5 Per Div S22 Fax: 886-6-5051602 TC2491 REV4_20070507 Rating 8 V 120 GHz -15 -30 2 GHz Swp Max 9GHz Swp Min 2GHz ...

Page 3

... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 S12 S22 MAG ANG MAG 0.0398 0.67 0.4193 0.0426 -24.40 0.3998 -104.93 0.0415 -48.07 0.3699 -126.51 0.0404 -76.10 0.3029 -144.68 0.0345 -110.20 0.1848 -151.48 0.0215 -147.61 0.1316 0.0112 170.65 0.3205 0.0076 44.87 0.5130 Source Fax: 886-6-5051602 TC2491 REV4_20070507 ANG -85.61 -94.58 -72.70 -84.93 ...

Related keywords

TC2491 datasheet
TC2491 data sheet
TC2491 pdf datasheet
TC2491 component
TC2491 part
TC2491 distributor
TC2491 RoHS
TC2491 datasheet download