pk55fg40 Sanrex Corp., pk55fg40 Datasheet

pk55fg40

Manufacturer Part Number

pk55fg40

Description

Thyristor Module

Manufacturer

Sanrex Corp.

Datasheet

1.PK55FG40.pdf (2 pages)

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（Applications）

Power Thyristor/Diode Module PK55FG series are designed for various rectifier circuits

and power controls. For your circuit application, following internal connections and wide

voltage ratings up to 1600V are available. and electrically isolated mounting base make

your mechanical design easy.

Various rectifiers

AC/DC motor drives

Heater controls

Light dimmers

Static switches

■Maximum Ratings

■Electrical Characteristics

＊mark：Thyristor and Diode part. No mark：Thyristor part

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

●

Rth （ j-c）＊Thermal Impedance,max

Symbol

di/dt 100A/ μs

dv/dt 1000V/ μs

dv/dt

T （ RMS）

T(AV)

di/dt

Tstg

T （ AV）

G （AV）

FGM

DRM

RRM

TSM

RGM

RRM

RSM

DRM

FGM

ISO

THYRISTOR MODULE

55A, I

＊Repetitive Peak Reverse Voltage

＊Non-Repetitive Peak Reverse Voltage

＊Repetitive Peak off-state Voltage

＊Average On-state Current

＊R.M.S. On-state Current

＊Surge On-state Current

＊I

＊Isolation Breakdown Voltage （R.M.S）

＊Operating Junction Temperature

＊Storage Temperature

＊Repetitive Peak Reverse Current,max

＊On-state Voltage,max

Mounting

Torque

Mass

T(RMS)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage (Forward)

Peak Gate Voltage (Reverse)

Critical Rate of Rise of On-state Current

Repetitive Peak off-state Current,max

Gate Trigger Current,max

Gate Trigger Voltage,max

Gate Trigger Voltage,min

Critical Rate of Rise of off-state Voltage,min

( PD,PE )

86A, I

TSM

Item

Mounting （M5）

Terminal （ M5）

1300A

55FG

Internal Configurations

Single phase, half wave, 180° conduction, Tc＝81℃

Value for one cycle surge current

A.C. 1minute

Recommended Value 1.5-2.5（15-25）

Typical Value

Tj＝125℃，V

Junction to case

／

A1K2

＝165A

PK55FG40

PD55FG40

PE55FG40

＝100mA， V

＝6V，I

Cycle, 50/60H

400

480

400

（K2）

（A2）

＝1A

＝

＝V

＝

／

, Peak Value, non-repetitive

DRM

Conditions

PK55FG80

PD55FG80

PE55FG80

DRM

A1K2

800

960

800

， di

（K2）

/dt＝0.1A/ μs

Ratings

（A2）

PK55FG120

PD55FG120

PE55FG120

（Tj＝25℃ unless otherwise specified）

1200

1300

1200

２ - φ6．０

2 ０．０ 2 ０．０ 2 ０．０

−40 to ＋125

1190/1300

PK55FG160

PD55FG160

PE55FG160

2.7（28）

Ratings

NAME PLATE

M ５ ×1 ０

８０．０ ± ０．２

7040

2500

1000

0.25

0.50

1.6

1600

1700

1600

100

170

92．０

UL;E76102 （ M）

１７．５

２．８

4-＃１１０ TAB

（㎏f･B）

Unit：

A/ μs

℃/W

V/ μs

N･m

Unit

℃

Related parts for pk55fg40

pk55fg40 Summary of contents

Page 1

... A1K2 （K2）（A2） A1K2 PD PK55FG40 PK55FG80 PD55FG40 PD55FG80 PE55FG40 PE55FG80 400 800 480 960 400 800 Conditions Single phase, half wave, 180° conduction, Tc＝81℃ Single phase, half wave, 180° conduction, Tc＝81℃ ...

Page 2

Gate Characteristics １００５０２０ V （10V） FGM １０５２２５ ℃ １０．５０．２０．１１０２０５０１００ ...

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