qm150hy-2h Mitsumi Electronics, Corp., qm150hy-2h Datasheet - Page 4

• Manufacturer Part Number: qm150hy-2h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
10
10
7
7
5
4
3
3
2
7
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
7
5
3
2
5
3
2
7
5
3
2
0
2
1
0
7
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
–1
TRANSIENT THERMAL IMPEDANCE
–3
T
NON–REPETITIVE
0
BASE REVERSE CURRENT –I
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
3
t
T
T
f
4
5
4
j
j
=25°C
=125°C
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
–1
I
I
2
V
B1
C
t
100µ
w
CC
2
2
=150A
=3A
=50µ
=600V
t
3
3
s
B2
4
4
S
5
5
(A)
CE
S
7
7
10
(V)
10
10
1
3
0
320
280
240
200
160
120
100
10
10
10
10
80
40
90
80
70
60
50
40
30
20
10
0
0
COLLECTOR-EMITTER REVERSE VOLTAGE
7
5
3
2
7
5
3
2
7
5
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
200
0.4
40
HIGH POWER SWITCHING USE
60
400
0.8
–V
CEO
80 100 120 140
I
B2
=–5A
600
(V)
1.2
QM150HY-2H
SECOND
BREAKDOWN
AREA
T
T
I
800
C
1.6
B2
j
j
=25°C
=125°C
INSULATED TYPE
( C)
=–2A
CE
1000
160
2.0
(V)
Feb.1999