qm50e2y Mitsumi Electronics, Corp., qm50e2y Datasheet - Page 4

• Manufacturer Part Number: qm50e2y
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
–1
3
2
7
5
4
3
2
7
5
4
3
5
4
3
2
1
0
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
2
1
0
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
–1
–2
0
V
I
I
BASE REVERSE CURRENT –I
T
NON-REPETITIVE
B1
C
CC
C
=50A
2
=1A
=25°C
SWITCHING TIME VS. BASE
=300V
2
2
3
T
T
4
BASE CURRENT I
j
j
=25°C
=125°C
3
CURRENT (TYPICAL)
3 4 5
5
VOLTAGE (TYPICAL)
I
C
7
t
t
4
=20A
s
f
10
5
1
7
7
2
10
10
3
–1
4
0
5
I
7
C
=30A
2
2 3 4 5 7
10
B
2
3
(A)
T
T
2
j
j
4
=25°C
=125°C
I
3
B2
C
5
4
=50A
(A)
5
CE
7
7
10
10
(V)
10
1
0
3
10
160
140
120
100
100
10
80
60
40
20
90
80
70
60
50
40
30
20
10
REVERSE BIAS SAFE OPERATING AREA
2
7
5
4
3
2
7
5
4
3
2
0
COLLECTOR-EMITTER VOLTAGE V
0
1
0
10
0
0
DERATING FACTOR OF F. B. S. O. A.
SWITCHING TIME VS. COLLECTOR
V
I
0
MITSUBISHI TRANSISTOR MODULES
B1
COLLECTOR
DISSIPATION
CC
COLLECTOR CURRENT I
CASE TEMPERATURE T
=–I
20
=300V
2 3 4 5 7
T
T
B2
j
j
=25°C
=125°C
CURRENT (TYPICAL)
200
40
=1A
HIGH POWER SWITCHING USE
60
QM50E2Y/E3Y-H
400
10
80
1
SECOND BREAK-
DOWN AREA
100 120
2 3 4 5 7
600
I
T
B2
C
j
C
INSULATED TYPE
=125°C
=–1A
–3A
–5A
( C)
(A)
140
CE
t
t
t
s
on
f
(V)
800
160
10
2
Feb.1999