qm30hq-24 Mitsumi Electronics, Corp., qm30hq-24 Datasheet - Page 2

• Manufacturer Part Number: qm30hq-24
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
V
V
I
P
I
T
T
V
I
I
I
V
V
h
t
t
t
R
R
C
B
CEX
CBO
EBO
on
s
f
j
stg
FE
CEX (SUS)
CEX
CBO
EBO
C
iso
CE (sat)
BE (sat)
th (j-c) Q
th (c-f)
Symbol
Symbol
—
—
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance
(case to fin)
Parameter
Parameter
(Tj=25 C, unless otherwise noted)
I
V
Emitter open
Collector open
DC
T
DC
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
V
V
V
I
I
V
Transistor part
Conductive grease applied
(Tj=25 C, unless otherwise noted)
C
C
C
C
EB
CE
CB
EB
CC
=1A, V
=15A, I
=15A, V
=25 C
=2V
=1200V, V
=7V
=1200V, Emitter open
=600V, I
EB
B
CE
=3A
=2V
=1V
C
=15A, I
EB
=2V
B1
=–I
Test conditions
B2
Conditions
=3A
DRIVE USE FOR HIGH POWER TRANSISTOR
MITSUBISHI TRANSISTOR MODULES
Min.
—
—
—
—
—
—
—
—
—
—
5
–40~+150
–40~+125
1.47~1.96
Ratings
15~20
Limits
1200
1200
1200
2500
Typ.
310
30
90
—
—
—
—
—
—
—
—
—
—
—
7
6
QM30HQ-24
INSULATED TYPE
Max.
0.25
200
1.0
1.0
1.0
1.5
1.5
7.0
2.0
0.4
—
kg·cm
Feb.1999
Unit
N·m
Unit
mA
mA
mA
C/ W
C/ W
W
—
V
V
V
V
A
A
V
g
V
V
C
C
s
s
s