qm75e2y-2h Mitsumi Electronics, Corp., qm75e2y-2h Datasheet
qm75e2y-2h
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qm75e2y-2h Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM 108 (7. 46.5 6 LABEL MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE • I Collector current .......................... 75A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................... 75 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 ...
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... Conditions = Test conditions =1000V, V =2V EB =1000V, Emitter open =7V =75A, I =1.5A B =75A (diode forward voltage) C =75A, V =2.8V/5V CE =600V, I =75A, I =–I =1. QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 1000 V 1000 V 1000 500 750 A Ratings Unit ...
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... =2. =25° –1 10 3.4 3 (V) COLLECTOR CURRENT I BE QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min. Typ. Max. — — — — 1.5 V — — 1.0 s — — — — 0 — ...
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... NON-REPETITIVE COLLECTOR-EMITTER VOLTAGE V (V) CE MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL –1 1 ...
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... TRANSIENT THERMAL IMPEDANCE 2 0.4 – – (A) F QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE CONDUCTION TIME (CYCLES AT 60Hz) CHARACTERISTIC – ...
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... – QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE CHARACTERISTIC –2 – TIME (s) (VS ...