TS1220-600H-TR STMICROELECTRONICS [STMicroelectronics], TS1220-600H-TR Datasheet - Page 2
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TS1220-600H-TR
Manufacturer Part Number
TS1220-600H-TR
Description
SENSITIVE & STANDARD(12A SCRs)
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.TS1220-600H-TR.pdf
(11 pages)
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TN12, TS12 and TYNx12 Series
Table 3: Absolute Ratings (limiting values)
Tables 4: Electrical Characteristics (T
■
2/11
Symbol
Symbol
I
P
T(RMS)
IT
V
dV/dt
I
I
I
dI/dt
V
V
V
SENSITIVE
V
T
DRM
RRM
I
G(AV)
TSM
I
V
R
RGM
GM
GT
I
I
T
I
(AV)
GT
GD
RG
TM
stg
H
²
L
t0
d
t
j
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction
angle)
Non repetitive surge peak on-
state current
I
Critical rate of rise of on-state
current I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN12 & TYN12 only)
V
V
I
I
I
V
I
Threshold voltage
Dynamic resistance
V
²
RG
T
G
TM
t Value for fusing
D
D
D
DRM
= 50 mA
= 1 mA
= 12 V
= V
= 65 % V
= 24 A
= 10 µA
= V
DRM
G
RRM
= 2 x I
R
tp = 380 µs
DRM
R
R
GK
GK
R
L
GT
L
= 3.3 k
R
= 1 k
= 1 k
= 140
GK
, t
R
r
GK
= 220
Parameter
100 ns F = 60 Hz
= 220
Test Conditions
R
j
GK
= 25°C, unless otherwise specified)
= 1 k
t
t
t
t
p
p
p
p
= 8.3 ms
= 10 ms
= 10 ms
= 20 µs
T
T
T
T
T
T
T
j
j
j
j
j
j
j
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
T
T
T
T
T
T
T
c
c
j
j
j
j
j
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 105°C
= 105°C
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
TN12-G
TYN12
145
140
98
- 40 to + 150
- 40 to + 125
Value
TS1220
12
50
8
4
1
5
0.85
200
TN12-B/H
TS12-B/H
0.8
0.1
1.6
30
8
5
6
5
5
2
115
110
60
Unit
V/µs
m
mA
mA
mA
µA
µA
A/µs
Unit
V
V
V
V
V
A
°C
W
A
A
A
A
V
2
S