mgf0915a Mitsumi Electronics, Corp., mgf0915a Datasheet
mgf0915a
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mgf0915a Summary of contents
Page 1
... DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm High power gain Gp=14.5 dB(TYP.) @f=1.9GHz High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm Hermetic Package APPLICATION For UHF Band power amplifiers ...
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... MGF0915A TYPICAL CHARACTERISTICS 40 VDS=10V 35 ID=0.8A 30 f=1.9GHz VD=10V ID=800mA 30 f1=1.90GHz f2=1.91GHz -10 -20 -30 -40 -5 Po,Gp,PAE vs.Pin Pin(dBm) IM3,Po(SCL) vs. Pi(SCL) Po IM3 Pi(SCL) (dBm -10 -20 ...
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... MGF0915A S PARAMETERS (Ta=25 C, VDS=10V, ID=800mA, Reference Plane see Fig.1) freq. S11 (MHz) (mag) (ang) 600 0.948 -145.92 1000 0.947 -161.85 1400 0.946 -168.94 1800 0.946 -173.55 2200 0.945 -176.72 2600 0.944 -178.89 3000 0.942 178.80 3400 0.939 177.37 3800 0.935 174.73 4200 ...