upa809t California Eastern Laboratories, upa809t Datasheet - Page 4

• Manufacturer Part Number: upa809t
• Description: Npn Silicon High Frequency Transistor
• Manufacturer: California Eastern Laboratories

BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available.
See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAF
VAR
CJE
MJE
CJC
VJE
ISE
ISC
IRB
VJC
IKF
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
0.796e-12
0.45e-12
3.8e-16
3.8e-15
3.5e-16
Q1, Q2
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
0.6
1.1
3.5
0.4
3.5
4.2
28
1
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
Q1, Q2
32e-12
9e-12
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.11
50
0
0
0
3
0
1
(1)
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
Parameter
time
capacitance
inductance
resistance
voltage
current
0.1 to 3.0 GHz
V
11/98
CE
= 1 V to 5 V, I
C
= 1 mA to 10 mA
seconds
henries
ohms
volts
amps
farads
Units