SST13LP05-MLCF-K SST [Silicon Storage Technology, Inc], SST13LP05-MLCF-K Datasheet

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SST13LP05-MLCF-K

Manufacturer Part Number
SST13LP05-MLCF-K
Description
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
FEATURES:
• High Gain:
• High linear output power:
• High power-added efficiency/Low operating
• Built-in Ultra-low I
• High-speed power-up/down
PRODUCT DESCRIPTION
The SST13LP05 is a fully matched, dual-band power
amplifier module (PAM) based on the highly-reliable InGaP/
GaAs HBT technology. This PAM provides excellent RF
performance, temperature-stable power detectors, and
low-current
SST13LP05 provides stable RF and power detector perfor-
mance over a large V
ultra-low shut-down current.
With a near-zero Rest of Bill of Materials (RBOM), the
SST13LP05 is designed for 802.11a/b/g applications cov-
ering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for
U.S., European, and Japanese markets.
The SST13LP05 has excellent linearity, typically 4% added
Error Vector Magnitude (EVM) at 19 dBm output power.
This output power is essential for 54 Mbps 802.11g opera-
tion while meeting 802.11g spectrum mask at 23 dBm and
802.11b spectrum mask at 23.5 dBm. For 802.11a opera-
©2006 Silicon Storage Technology, Inc.
S71318-00-000
1
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
– Typically 29 dB gain across 2.4-2.5 GHz
– Typically 29-26 dB gain across 4.9-5.8 GHz
– >25 dBm P1dB (Pulsed single-tone signal) across
– Meets 802.11b OFDM ACPR requirement up to
– Meets 802.11g OFDM ACPR requirement up to
– Added EVM ~4% up to 19 dBm for
– >24 dBm P1dB across 4.9-5.8 GHz
– Meets 802.11a OFDM ACPR requirement up to
– Added EVM ~4% up to 18 dBm for
current for 802.11a/b/g applications
– ~160 mA @ P
– ~235 mA @ P
– ~270 mA @ P
– I
– Turn on/off time (10%-90%) <100 ns
– Typical power-up/down delay with driver delay
2.4-2.5 GHz
23.5 dBm across 2.4-2.5 GHz
23 dBm across 2.4-2.5 GHz
54 Mbps 802.11g signal across 2.4-2.5 GHz
22.5 dBm across 4.9-5.8 GHz
54 Mbps 802.11a signal across 4.9-5.8 GHz
included <200 ns
REF
< 2 mA
analog
OUT
OUT
OUT
12/06
SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
CC
on/off
REF
= 19 dBm for 802.11g
= 23.5 dBm for 802.11b
= 18 dBm for 802.11a
power supply variation, with an
power-up/down control
control
interfaces.
SST13LP05
The
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
• High temperature stability
• Low shut-down current (< 2 µA)
• 20 dB dynamic range on-chip power detection
• Built-in input/output matching
• Packages available
• All non-Pb (lead-free) devices are ROHS compliant.
APPLICATIONS:
• WLAN (IEEE 802.11a/g/b)
• Japanese WLAN
• HyperLAN2
• Multimedia
• Home RF
• Cordless phones
tion, the SST13LP05 typically demonstrates <4% added
EVM at 18 dBm output power while meeting 802.11a spec-
trum mask at 22.5 dBm.
The SST13LP05 also has wide-range (>20 dB), tempera-
ture-stable (±0.5 dB across 0°C to +85°C), directionally-
coupled, power detectors which provide a reliable and cost-
effective solution to board-level power control. The device’s
analog on/off control can be driven by an analog or digital
control signal from either a transceiver or baseband chip.
These features, coupled with low operating current, make
the SST13LP05 ideal for the final stage power amplifica-
tion in both battery-powered 802.11a/b/g WLAN trans-
mitters and access point applications.
The SST13LP05 is offered in a 16-contact LGA package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
– ~1 dB gain/power variation between 0°C to +85°C
– ~3/1 dB gain/max linear power variation between
– ±0.5 dB detector variation between 0°C to +85°C
– 16-contact LGA package (4mm x 4mm)
across 2.4-2.5 GHz
0°C to +85°C across 4.9-5.8 GHz
These specifications are subject to change without notice.
Preliminary Specifications

Related parts for SST13LP05-MLCF-K

SST13LP05-MLCF-K Summary of contents

Page 1

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz • High linear output power: – >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz – Meets 802.11b OFDM ACPR requirement up to 23.5 dBm across 2.4-2.5 GHz – ...

Page 2

... FUNCTIONAL BLOCKS _HB IN FIGURE 1: Functional Block Diagram ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Bias Network NC 2 _LB Bias Network SST13LP05 _LB OUT 10 RF _HB OUT 9 NC 1318 B1.0 S71318-00-000 12/06 ...

Page 3

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 PIN ASSIGNMENTS RF _LB IN RF _HB IN FIGURE 2: Pin Assignments for 16-contact LGA ©2006 Silicon Storage Technology, Inc Top View 2 (contacts facing down and DC GND Preliminary Specifications ...

Page 4

... O/PWR 50Ω Matched RF output for High Band O/PWR 50Ω Matched RF output for Low Band Unconnected Pin O Detector Voltage Output for Low Band PWR V Power Supply for Low Band CC Unconnected Pin PWR Analog current control for Low Band 4 SST13LP05 T1.0 1318 S71318-00-000 12/06 ...

Page 5

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC voltage and current specifications. Refer to Figures 3 through 22 for the RF performance. Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum Stress Rat- ings” ...

Page 6

... Harmonics dBm OUT Spurious non-harmonics at P In/Out return loss at 50 Ω nominal impedance ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Parameter ° ° C – dBm OUT 6 SST13LP05 Min. Typ Max. Unit 3.0 3.3 3.6 160 mA 235 2.95 Min. ...

Page 7

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 For 802.11a Operation TABLE 4: DC Electrical Characteristics Symbol V Supply Voltage CC I Supply Current CC for 802.11a, 18 dBm I Analog control current at On state REG V Reference Voltage REG TABLE 5: AC Electrical Characteristics for Configuration Symbol Parameter F Frequency range ...

Page 8

... FIGURE 3: Low Band S-Parameters ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier = 2.95V unless otherwise noted REF 0 -10 -20 -30 -40 -50 -60 -70 -80 6.0 7.0 8.0 9.0 0.0 1 -10 -15 -20 -25 -30 6.0 7.0 8.0 9.0 0.0 1.0 8 SST13LP05 S12 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) S22 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) 1318 SParmLowB.0 S71318-00-000 9.0 9.0 12/06 ...

Page 9

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Test Conditions 3 REF 22 21 Freq=2.412 GHz 20 Freq=2.442 GHz 19 Freq=2.484 GHz -21 -20 -19 -18 FIGURE 4: Low Band Output Power versus Input Power 40 38 Freq=2.412 GHz 36 Freq=2.442 GHz Freq=2 ...

Page 10

... FIGURE 7: Low Band PAE versus Output Power ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Supply Current versus Output Power Output Power (dBm) PAE versus Output Power Output Power (dBm) 10 SST13LP05 1318 F7 1318 F8.1 S71318-00-000 12/06 ...

Page 11

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 10 9 Freq=2.412 GHz 8 Freq=2.442 GHz Freq=2.484 GHz FIGURE 8: Low Band EMV versus Output Power 10 0 -10 -20 -30 -40 -50 -60 -70 2.35 FIGURE 9: Low Band 802.11b Spectrum Mask at 23 dBm with DC Current of 220 mA © ...

Page 12

... FIGURE 10: Low Band 802.11b Spectrum Mask at 23.5 dBm with DC Current of 235 mA ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier = 2.95V 25°C, 1 Mbps 802.11b CCK Signal A 2.40 2.45 Frequency (GHz) 12 SST13LP05 Freq = 2.412 GHz Freq = 2.442 GHz Freq = 2.484 GHz 2.50 2.55 1318 F12.0 S71318-00-000 12/06 ...

Page 13

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Low Band Power Detector Characteristics Test Conditions 3.3V REF 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0. FIGURE 11: Low Band Detector Voltage versus Output Power ©2006 Silicon Storage Technology, Inc. = 2.95V 25°C, 54 Mbps 802.11g OFDM Signal A Detector Voltage versus Output Power Freq=2 ...

Page 14

... FIGURE 12: High Band S-Parameters ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier = 2.95V unless otherwise noted REF 0 -10 -20 -30 -40 -50 -60 -70 -80 6.0 7.0 8.0 9.0 0.0 1 -10 -15 -20 -25 -30 6.0 7.0 8.0 9.0 0.0 1.0 14 SST13LP05 S12 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) S22 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) 1318 SParmHighB.0 S71318-00-000 9.0 9.0 12/06 ...

Page 15

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Test Conditions 3.3V REF 22 21 Freq=4.920 GHz 20 Freq=5.180 GHz 19 Freq=5.320 GHz 18 Freq=5.805 GHz -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 FIGURE 13: High Band Output Power versus Input Power ...

Page 16

... Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Supply Current versus Output Power Output Power (dBm) PAE versus Output Power Output Power (dBm) 16 SST13LP05 1318 F19 1318 F20.2 S71318-00-000 12/06 ...

Page 17

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 10 9 Freq=4.920 GHz Freq=5.180 GHz 8 Freq=5.320 GHz 7 Freq=5.805 GHz FIGURE 17: High Band EVM versus Output Power 10 0 -10 -20 -30 -40 -50 -60 -70 4.85 4.87 FIGURE 18: High Band 802.11a Spectrum Mask at 4.92 GHz at Output Power 22.5 dBm with DC Current at 370 mA © ...

Page 18

... DC Current at 355 -10 -20 -30 -40 -50 -60 -70 5.25 5.27 FIGURE 20: High Band 802.11a Spectrum Mask at 5.32 GHz at Output Power 23 dBm with DC Current at 360 mA ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier 5.15 5.17 5.19 Frequency (GHz) 5.29 5.31 5.33 Frequency (GHz) 18 SST13LP05 5.21 5.23 5.25 1318 F24.0 5.35 5.37 5.39 1318 F25.0 S71318-00-000 12/06 ...

Page 19

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 10 0 -10 -20 -30 -40 -50 -60 -70 5.74 5.76 FIGURE 21: High Band 802.11a Spectrum Mask at 5.805 GHz at Output Power 23 dBm with DC Current at 350 mA ©2006 Silicon Storage Technology, Inc. 5.78 5.80 5.82 Frequency (GHz) 19 Preliminary Specifications 5.84 5.86 5.88 S71318-00-000 12/06 ...

Page 20

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier = 2.95V 25°C, 54 Mbps 802.11a OFDM Signal A Detector Voltage versus Output Power Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz Output Power (dBm) 20 SST13LP05 1318 F22.2 S71318-00-000 12/06 ...

Page 21

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 50Ω RF _LB IN 50Ω RF _HB IN FIGURE 23: Typical Application Circuit ©2006 Silicon Storage Technology, Inc. V _LB D _LB REF Bias Network Bias Network _HB D _HB REF ET 21 Preliminary Specifications ...

Page 22

... MLC F SSTXXLP XX - XXX X Valid combinations for SST13LP05 SST13LP05-MLCF SST13LP05 Evaluation Kits SST13LP05-MLCF-K Note: Consult your SST sales representative to confirm availability of valid combinations. ©2006 Silicon Storage Technology, Inc. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Environmental Attribute non-Pb contact (lead) finish Package Modifier ...

Page 23

... GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 TOP VIEW Pin #1 Laser Engraved 4.00 ±0.10 Note: 1. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 2. The external paddle is electrically connected to the die back-side and should be soldered to the VSS of the PC board. Connection of this paddle to any other voltage potential will result in shorts and/or electrical malfunction of the device ...

Page 24

... Sijhih City, Taipei County 22101, Taiwan, R.O.C. Tel: +886-2-8698-1168 Fax: +886-2-8698-1169 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com www.SuperFlash.com or www.sst.com 24 SST13LP05 S71318-00-000 12/06 ...

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