12T06A-B NELLSEMI [Nell Semiconductor Co., Ltd], 12T06A-B Datasheet - Page 5

• Manufacturer Part Number: 12T06A-B
• Description: TRIACs, 12A Snubberless, Logic Level and Standard
• Manufacturer: NELLSEMI [Nell Semiconductor Co., Ltd]

www.nellsemi.com
1000
Fig.9 Relative variation of critical rate of decrease
Fig.11 Relative variation of critical rate of decrease
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
6
5
4
3
2
0
1
SEMICONDUCTOR
0.01
0.1
Fig.7 Non-repetitive surge peak on-state current
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [T ] (dl/dt)c [
0
l
TSM
B
of main current versus (dV/dt)c (typical values).
C
dI/dt limitation:
of main current versus junction temperature
50A/µs
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l t.
(A), l t(A s)
SW
j
25
2
2
0.10
1.0
T specified ]
j
(dV/dt)c (V/µs)
50
t (ms)
p
T (°C)
j
1.00
75
10.0
2
I
TSM
I t
T initial=25°C
2
CW/BW
j
100
10.00
Page 5 of 6
100.0
125
2.5
2.0
1.5
1.0
0.5
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
30
20
40
10
0
Fig.10 Relative variation of critical rate of
-40
Fig.8 Relative variation of gate trigger current,holding
0.1
0
l
Fig.12 D PAK thermal resistance junction to
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
R
GT H L
th(j-a)
,
current and latching current versus junction
temperature (typical values).
l
I
-20
TW
H
4
,
decrease
(typical values).
D PAK
&
l [T ] / l
(°C/W)
2
I
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
L
I
GT
2
j
8
0
GT H L
12
,l ,l [T =25°C]
1.0
of main current versus (dV/dt)c
20
(dV/dt)c (V/µs)
12T Series
16
40
S(cm )
j
T (°C)
20
j
2
60
24
10.0
80
28
100
32
120
36
RoHS
RoHS
100.0
140
40