SST29EE512-70-4C-EH SST [Silicon Storage Technology, Inc], SST29EE512-70-4C-EH Datasheet - Page 6

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SST29EE512-70-4C-EH

Manufacturer Part Number
SST29EE512-70-4C-EH
Description
512 Kbit (64K x8) Page-Write EEPROM
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SST29EE512-70-4C-EH
Manufacturer:
SAMSUNG
Quantity:
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Part Number:
SST29EE512-70-4C-EH
Manufacturer:
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Quantity:
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Data Sheet
TABLE 2: P
TABLE 3: O
©2005 Silicon Storage Technology, Inc.
Symbol
A
A
DQ
CE#
OE#
WE#
V
V
NC
Mode
Read
Page-Write
Standby
Write Inhibit
Software Chip-Erase
Product Identification
Software Mode
SDP Enable Mode
SDP Disable Mode
15
6
DD
SS
-A
1. X can be V
2. Device ID = 5DH for SST29EE512
-A
7
-DQ
0
7
0
Pin Name
Row Address Inputs
Column Address Inputs
Data Input/output
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
IN
PERATION
IL
or V
D
ESCRIPTION
IH
, but no other value.
M
ODES
CE#
V
V
V
V
V
V
V
X
X
IH
IL
IL
IL
IL
IL
IL
S
ELECTION
OE#
V
V
V
V
V
V
V
X
X
IH
IH
IH
IH
IH
IL
IL
Functions
To provide memory addresses. Row addresses define a page for a Write cycle.
Column Addresses are toggled to load page data
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide:
Unconnected pins.
1
WE#
V
V
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
IL
IL
DQ
D
D
High Z
High Z/ D
High Z/ D
D
Manufacturer’s ID (BFH)
Device ID
5.0V supply (4.5-5.5V) for SST29EE512
OUT
IN
IN
OUT
OUT
2
6
512 Kbit Page-Write EEPROM
Address
A
A
X
X
X
A
See Table 4
See Table 4
See Table 4
IN
IN
IN,
See Table 4
SST29EE512
S71060-09-000
T2.3 1060
T3.4 1060
9/05

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