SST29SF040 SST [Silicon Storage Technology, Inc], SST29SF040 Datasheet - Page 8
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SST29SF040
Manufacturer Part Number
SST29SF040
Description
4 Mbit (x8) Small-Sector Flash
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
1.SST29SF040.pdf
(22 pages)
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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Part Number:
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Part Number:
SST29SF040-55-4C-WHE
Manufacturer:
SST
Quantity:
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Data Sheet
TABLE 6: DC O
TABLE 7: R
TABLE 8: C
TABLE 9: R
©2004 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
IHC
OL
OH
I/O
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
Parameter
Power Supply Current
Read
Program and Erase
Standby V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
PERATING
DD
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
Current
C
HARACTERISTICS
C
S
YSTEM
HARACTERISTICS
P
OWER
-
UP
V
V
0.7V
DD
DD
Min
V
T
DD
-0.3
-0.2
IMINGS
DD
= 2.7-3.6V
Limits
Minimum Specification
Max
0.8
0.2
25
30
15
10
1
8
100 + I
10,000
Units
100
mA
mA
FOR
µA
µA
µA
V
V
V
V
V
DD
SST29VF040
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
V
V
V
V
V
I
I
OL
OH
OUT
DD
IN
DD
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
Test Condition
=V
=V
=V
=V
=GND to V
Minimum
DD
DD
DD
DD
V
IL
IHC
V
SST29SF040 / SST29VF040
I/O
, OE#=WE#=V
IN
100
100
4 Mbit Small-Sector Flash
Max
Min
Max
Max
, V
= 0V
= 0V
Cycles
Units
Years
DD
IL
mA
DD
DD
, OE#=V
DD
=V
DD
, V
=V
ILT
=V
DD
, V
/V
DD
DD
DD
IHT
DD
Max
=V
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
Min
, at f=5 MHz,
IH
IH
=V
Min
DD
, all I/Os open
DD
Max
Max
S71160-10-000
Maximum
Units
12 pF
6 pF
µs
µs
T6.8 1160
T7.1 1160
T8.1 1160
T9.2 1160
2/04