SST39LF-200A-554C-B3KE SST [Silicon Storage Technology, Inc], SST39LF-200A-554C-B3KE Datasheet

SST39LF-200A-554C-B3KE

Manufacturer Part Number

SST39LF-200A-554C-B3KE

Description

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

Manufacturer

SST [Silicon Storage Technology, Inc]

Datasheet

1.SST39LF-200A-554C-B3KE.pdf (31 pages)

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FEATURES:

• Organized as 128K x16 / 256K x16 / 512K x16

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Sector-Erase Capability

• Block-Erase Capability

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are 128K x16 / 256K x16 / 512K x16 CMOS

Multi-Purpose Flash (MPF) manufactured with SST propri-

etary, high-performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF200A/400A/800A

write (Program or Erase) with a 3.0-3.6V power supply.

The SST39VF200A/400A/800A write (Program or Erase)

with a 2.7-3.6V power supply. These devices conform to

JEDEC standard pinouts for x16 memories.

Featuring

SST39LF200A/400A/800A

800A devices provide a typical Word-Program time of 14

µsec. The devices use Toggle Bit or Data# Polling to detect

the completion of the Program or Erase operation. To pro-

tect against inadvertent write, they have on-chip hardware

and software data protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

S71117-12-000

– 3.0-3.6V for SST39LF200A/400A/800A

– 2.7-3.6V for SST39VF200A/400A/800A

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

(typical values at 14 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Uniform 2 KWord sectors

– Uniform 32 KWord blocks

– 55 ns for SST39LF200A/400A/800A

– 70 ns for SST39VF200A/400A/800A

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

high-performance

SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories

SST39VF200A / SST39VF400A / SST39VF800A

SST39LF200A / SST39LF400A / SST39LF800A

04/10

and

Word-Program,

SST39VF200A/400A/

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Word-Program

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are suited for applications that require con-

venient and economical updating of program, configura-

tion, or data memory. For all system applications, they

significantly improve performance and reliability, while low-

ering power consumption. They inherently use less energy

during Erase and Program than alternative flash technolo-

gies. When programming a flash device, the total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed dur-

ing any Erase or Program operation is less than alternative

flash technologies. These devices also improve flexibility

while lowering the cost for program, data, and configura-

tion storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

– 48-ball WFBGA (4mm x 6mm)

– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit

2 seconds (typical) for SST39LF/VF200A

4 seconds (typical) for SST39LF/VF400A

8 seconds (typical) for SST39LF/VF800A

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST39LF-200A-554C-B3KE

SST39LF-200A-554C-B3KE Summary of contents

Page 1

... Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories FEATURES: • Organized as 128K x16 / 256K x16 / 512K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – ...

Page 2

... CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the SST39LF200A/400A/800A and SST39VF200A/400A/800A is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is con- sumed ...

Page 3

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A The actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this occurs, the system may possibly get an erroneous result, i ...

Page 4

... Data Sheet Product Identification The Product Identification mode identifies the devices as the SST39LF/VF200A, SST39LF/VF400A and SST39LF/ VF800A and manufacturer as SST. This mode may be accessed by software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket ...

Page 5

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF800A SST39LF/VF400A SST39LF/VF200A A15 A15 A15 A14 A14 A14 A13 A13 A13 A12 A12 A12 A11 A11 A11 A10 A10 A10 WE# WE# WE ...

Page 6

... CE FIGURE 4: Pin Assignments for 48-Ball WFBGA and 48-Bump XFLGA ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A TOP VIEW (balls facing down) SST39VF200A WE ...

Page 7

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A TABLE 2: Pin Description Symbol Pin Name Functions Address Inputs To provide memory addresses. During Sector-Erase sector. During Block-Erase A DQ -DQ Data Input/output To output data during Read cycles and receive input data during Write cycles. ...

Page 8

... The device does not remain in Software Product ID mode if powered down. 6. With SST Manufacturer’ 00BFH, is read with SST39LF/VF200A Device ID = 2789H, is read with A SST39LF/VF400A Device ID = 2780H, is read with A SST39LF/VF800A Device ID = 2781H, is read with A 7. Both Software ID Exit operations are equivalent TABLE 5: CFI Query Identification String Address Data Data ...

Page 9

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A TABLE 6: System Interface Information for SST39LF200A/400A/800A and SST39VF200A/400A/800A Address Data Data 1 1BH 0027H V Min (Program/Erase 0030H DQ -DQ : Volts 1CH 0036H V Max (Program/Erase -DQ : Volts 1DH 0000H V min (00H = no V ...

Page 10

... Data Sheet TABLE 8: Device Geometry Information for SST39LF/VF400A Address Data Data 27H 0013H Device size = 2 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0000H Maximum number of bytes in multi-byte write = 2 2BH 0000H 2CH 0002H Number of Erase Sector/Block sizes supported by device ...

Page 11

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied ...

Page 12

... Data Sheet TABLE 10: DC Operating Characteristics V = 3.0-3.6V for SST39LF200A/400A/800A and 2.7-3.6V for SST39VF200A/400A/800A DD Symbol Parameter I Power Supply Current DD 2 Read Program and Erase I Standby V Current Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Input High Voltage (CMOS) ...

Page 13

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A AC CHARACTERISTICS TABLE 14: Read Cycle Timing Parameters V Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output ...

Page 14

... Block-Erase BE T Chip-Erase SCE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Min ...

Page 15

... AS OE# CE# DQ XXAA 15-0 SW0 Note Most significant address for SST39LF/VF200A for SST39LF/VF400A and A 18 for SST39LF/VF800A X can but no other value. FIGURE 6: WE# Controlled Program Cycle Timing Diagram ©2010 Silicon Storage Technology, Inc ...

Page 16

... DATA 7 Note Most significant address for SST39LF/VF200A FIGURE 8: Data# Polling Timing Diagram ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A INTERNAL PROGRAM OPERATION STARTS 2AAA 5555 ADDR ...

Page 17

... Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 16 Most significant address for SST39LF/VF200A for SST39LF/VF400A and A 18 for SST39LF/VF800A X can but no other value. FIGURE 10: WE# Controlled Chip-Erase Timing Diagram © ...

Page 18

... A for SST39LF/VF200A can FIGURE 12: WE# Controlled Sector-Erase Timing Diagram ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SIX-BYTE CODE FOR BLOCK-ERASE 5555 5555 2AAA XX80 XXAA XX55 SW1 ...

Page 19

... CE# OE WE# DQ XXAA 15-0 SW0 Device ID = 2789H for SST39LF/VF200A, 2780H for SST39LF/VF400A and 2781H for SST39LF/VF800A Note: X can but no other value. FIGURE 13: Software ID Entry and Read THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESS A 5555 2AAA 14-0 CE# OE# ...

Page 20

... DQ XXAA 15-0 CE# OE WE# SW0 Note: X can be V FIGURE 15: Software ID Exit/CFI Exit ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A 5555 XX55 XXF0 T IDA T WHP SW1 SW2 but no other value 1117 F10.1 ...

Page 21

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 16: AC Input/Output Reference Waveforms FIGURE 17: A Test Load Example ©2010 Silicon Storage Technology, Inc. ...

Page 22

... Data Sheet FIGURE 18: Word-Program Algorithm ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Start Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XXA0H Address: 5555H Load Word Address/Word Data ...

Page 23

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 19: Wait Options ©2010 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match? ...

Page 24

... Load data: XX98H Address: 5555H Wait T IDA Read CFI data FIGURE 20: Software ID/CFI Command Flowcharts ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Software ID Entry Command Sequence Load data: XXAAH Load data: XXAAH Address: 5555H ...

Page 25

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Chip-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX10H ...

Page 26

... Data Sheet PRODUCT ORDERING INFORMATION SST 39 VF 200A - XXXX - XXX ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A - 4C - B3K XXX X Environmental Attribute 1 E Package Modifier leads or balls balls or bumps (66 possible positions) Package Type B3 = TFBGA (0 ...

Page 27

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Valid combinations for SST39LF200A SST39LF200A-55-4C-EKE SST39LF200A-55-4C-B3KE Valid combinations for SST39VF200A SST39VF200A-70-4C-EKE SST39VF200A-70-4C-B3KE SST39VF200A-70-4C-M1QE SST39VF200A-70-4I-EKE SST39VF200A-70-4I-B3KE Valid combinations for SST39LF400A SST39LF400A-55-4C-EKE SST39LF400A-55-4C-B3KE ...

Page 28

... Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. FIGURE 22: 48-Lead Thin Small Outline Package (TSOP) 12mm x 20mm SST Package Code: EK ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A 18.50 18.30 20.20 19. ...

Page 29

... Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A TOP VIEW 8.00 ± 0. CORNER SIDE VIEW SEATING PLANE Note: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent. 2. All linear dimensions are in millimeters. ...

Page 30

... No ball is present at A1; a gold-colored indicator is present. 5. Bump opening size is 0.29 (±0.05 mm). FIGURE 25: 48-Bump Extremely-Thin-Profile, Fine-Pitch Land Grid Array (XFLGA) 4mm x 6mm SST Package Code: C1Q ©2010 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A BOTTOM VIEW 5.00 4.00 2.50 ± ...

Page 31

... EOL of all Y1QE parts. Replacement parts are M1QE parts in this document. 12 • EOL of SST39LF200A-45-4C-EKE and SST39LF200A-45-4C-B3KE. See S71117(12). Replacement parts are SST39LF200A-55-4C-EKE and SST39LF200A- 55-4C-B3KE found in this document. ©2010 Silicon Storage Technology, Inc. Description Silicon Storage Technology, Inc. ...

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