Ordering Information
Features
❏ Dual N-channel devices
❏ Low threshold — 2.0V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
240V
Telecom switches
DSS
DGS
/
R
(max)
6.0Ω
DS(ON)
V
(max)
2.0V
GS(th)
Dual N-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
I
1.0A
D(ON)
-55°C to +150°C
Order Number/Package
BV
BV
300°C
± 20V
TD9944TG
DGS
DSS
SO-8
1
Low Threshold DMOS Technology
These dual low threshold enhancement-mode (normally-off)
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Pin Configuration
Note: See Package Outline section for dimensions.
G
G
S
S
1
1
2
2
1
2
3
4
top view
SO-8
Low Threshold
8
7
6
5
TD9944
D
D
D
D
1
1
2
2