as29f010 Austin Semiconductor, Inc., as29f010 Datasheet - Page 4

• Manufacturer Part Number: as29f010
• Description: Uniform Sector 5.0v Flash Memory
• Manufacturer: Austin Semiconductor, Inc.

DEVICE BUS OPERATIONS
device bus operations, which are initiated through the internal
command register. The command register itself does not
occupy any addressable memory location. The register is
composed of latches that store the commands, along with the
address and data information needed to execute the command.
The contents of the register serve as inputs to the internal state
machine. The state machine outputs dictate the function of the
device. The appropriate device bus operations table lists the
inputs and control levels required, and the resulting output.
The following subsections describe each of these operations
in further detail.
Requirements for Reading Array Data
the CE\ and OE\ pins to V
selects the device. OE\ is the output control and gates array
data to the output pins. WE\ should remain at V
upon device power-up, or after a hardware reset. This ensures
that no spurious alteration of the memory content occurs
during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles
that assert valid addresses on the device address inputs
produce valid data on the device data outputs. The device
remains enabled for read access until the command register
contents are altered.
the AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing waveforms.
ICC1 in the DC Characteristics table represents the active
current specification for reading array data.
TABLE 1: DEVICE BUS OPERATIONS
NOTES:
1. Addresses are A16:A0.
2. The sector protect and sector unprotect functions must be implemented via programming equipment. See the “Sector Protection/
Unprotection” section.
AS29F010
Rev. 2.2 09/07
Read
Write
Standby
Output Disable
Hardware Reset
OPERATION
This section describes the requirements and use of the
To read array data from the outputs, the system must drive
The internal state machine is set for reading array data
See “Reading Array Data” for more information. Refer to
V
CC
IL
Austin Semiconductor, Inc.
CE\
. CE\ is the power control and
± 0.5V
X
L
L
L
OE\
H
H
X
X
L
IH
.
WE\
H
H
X
X
L
4
Writing Commands/Command Sequences
programming data to the device and erasing sectors of memory),
the system must drive WE\ and CE\ to V
or the entire device. The Sector Address Tables indicate the
address space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select a
sector. See the “Command Definitions” section for details on
erasing a sector or the entire chip.
the device enters the autoselect mode. The system can then
read autoselect codes from the internal register (which is
separate from the memory array) on DQ7 - DQ0. Standard read
cycle timings apply in this mode. Refer to the “Autoselect
Mode” and “Autoselect Command Sequence” sections for more
information.
current specification for the write mode. The “AC
Characteristics” section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
check the status of the operation by reading the status bits on
DQ7 - DQ0. Standard read cycle timings and I
specifications apply. Refer to “Write Operation Status” for
more information, and to each AC Characteristics section in the
appropriate data sheet for timing diagrams.
Addresses
To write a command or command sequence (which includes
An erase operation can erase one sector, multiple sectors,
After the system writes the autoselect command sequence,
I
During an erase or program operation, the system may
A
A
CC2
X
X
X
IN
IN
in the DC Characteristics table represents the active
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
DQ0 - DQ7
High-Z
High-Z
High-Z
D
D
OUT
IN
IL
AS29F010
, and OE\ to V
FLASH
FLASH
FLASH
FLASH
FLASH
CC
IH
read
.