RB520S-30_1 ROHM [Rohm], RB520S-30_1 Datasheet

no-image

RB520S-30_1

Manufacturer Part Number
RB520S-30_1
Description
Schottky barrier diode
Manufacturer
ROHM [Rohm]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB520S-30_1RB520S-30T1G
Manufacturer:
ON
Quantity:
900 000
Part Number:
RB520S-30_1RB520S-30T1G
Manufacturer:
LRC
Quantity:
3 119
Part Number:
RB520S-30_1RB520S-30T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Diodes
Schottky barrier diode
RB520S-30
Low current rectification
1) Ultra Small mold type. (EMD2)
2) Low I
3) High reliability.
Silicon epitaxial planar
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Forward voltage
Reverse current
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
R
.
Parameter
Parameter
Symbol
V
I
R
F
JEITA : SC-79
JEDEC :SOD-523
ROHM : EMD2
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
0.8±0.05
0.3±0.05
dot (year week factory)
Min.
-
-
Symbol
Tstg
I
0.95±0.06
4.0±0.1
V
FSM
Io
Tj
R
0
Typ.
-
-
2.0±0.05
Empty poc ket
空ポケット
0.6±0.1
Max.
0.6
1
0.12±0.05
-40 to +125
4.0±0.1
Limits
200
125
φ1.5±0.05
30
1
Unit
µA
V
2.0±0.05
Land size figure (Unit : mm)
I
V
Structure
F
φ0.5
=200mA
R
=10V
EMD2
Unit
mA
Conditions
V
A
Rev.C
RB520S-30
0.8
0.2
0.2±0.05
0.76±0.05
1/3

Related parts for RB520S-30_1

RB520S-30_1 Summary of contents

Page 1

... Empty poc ket 0 Limits Symbol FSM Tj -40 to +125 Tstg Min. Typ. Max 0 RB520S-30 Land size figure (Unit : mm) 0.8 EMD2 Structure 0.2±0.05 φ1.5±0.05 0.2 φ0.5 2.0±0.05 0.76±0.05 Unit 30 V 200 ℃ 125 ℃ Conditions Unit I =200mA ...

Page 2

... Ifsm 8.3ms 8.3ms 1cyc NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.3 D=1/2 0.2 Sin(θ=180) DC 0.1 0 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS RB520S-30 100 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 Ta=25℃ 45 f=1MHz 40 VR=0V n=10pcs AVE:28.2pF DISPERSION MAP ...

Page 3

... Diodes 0 D=t/T 0.3 T D=1/2 0.2 0.1 Sin(θ=180 100 AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta VR=15V 0.3 Tj=125℃ D=1/2 0.2 0.1 Sin(θ=180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating curve (Io-Tc) RB520S- D=t/T VR=15V Tj=125℃ 125 Rev.C 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords