SSC-SFT821N-BS SEOUL [Seoul Semiconductor], SSC-SFT821N-BS Datasheet - Page 3

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SSC-SFT821N-BS

Manufacturer Part Number
SSC-SFT821N-BS
Description
Top View LED
Manufacturer
SEOUL [Seoul Semiconductor]
Datasheet
SSC-QP-7-03-08(REV.00)
4. Electro-Optical Characteristics
*1 The luminous intensity I
*2 Please refer to CIE 1931 chromaticity diagram
*3 2
[Note] All measurements were made under the standardized environment of SSC.
Luminous Intensity Measurement allowance is ±10%
Luminance Intensity
Dominant Wavelength
θ
Spectral Bandwidth
½
Peak Wavelength
Viewing Angle
is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Forward Voltage
Reverse Current
Parameter
V
*3
was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
*1
148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea
R, G, B
Green
Green
Green
Green
Green
Green
Blue
Blue
Blue
Blue
Blue
Blue
Red
Red
Red
Red
Red
Red
SEOUL SEMICONDUCTOR CO., LTD.
Symbol
Phone : 82-2-2106-7305~6
∆λ
V
λ
λ
I
I
R
V
F
P
d
½
- 3/14 -
Condition
I
I
I
I
I
I
I
I
I
I
I
I
I
I
(per chip)
(per die)
(per die)
F
F
F
V
F
F
F
F
F
F
F
F
F
F
F
=20mA
=20mA
=20mA
R
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
=10V
Min
620
520
455
1.8
3.0
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
1200
Typ
700
400
632
518
453
623
527
460
120
2.1
3.2
3.2
14
33
23
-
-
-
1600
1100
Max
3.5-
3.5-
560
625
535
465
2.3
1
1
1
-
-
-
-
-
-
-
SSC-SFT821N-S
(T
a
=25ºC)
Unit
mcd
deg.
µA
nm
nm
nm
V

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