MMDT3946G-AL6-R UTC [Unisonic Technologies], MMDT3946G-AL6-R Datasheet - Page 5

• Manufacturer Part Number: MMDT3946G-AL6-R
• Description: COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

MMDT3946
TR2(NPN)
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note: 1. Short duration pulse test used to minimize self-heating effect.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ELECTRICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
Preliminary
SYMBOL
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
CE(SAT)
BE(SAT)
C
I
h
h
h
h
NF
I
h
CEX
OBO
t
t
t
f
t
BL
IBO
RE
OE
FE
FE
IE
T
D
R
S
F
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
V
V
f=1.0kHz
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CE
CC
BE(OFF)
CC
=10μA, I
=1.0mA, I
=10μA, I
=100µA, V
=1.0mA, V
=10mA, V
=50mA, V
=100mA, V
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=I
=0.5V, f=1.0MHz, I
=30V, V
=30V, V
=5.0V, f=1.0MHz, I
=10V, I
=20V, I
=5.0V, I
=3.0V, I
=3.0V, I
(T
B2
A
=1.0mA
TEST CONDITIONS
=25°C,unless otherwise specified.)
=-0.5V, I
C
E
B
B
B
B
C
C
=0
=0
B
C
C
C
EB(OFF)
EB(OFF)
CE
CE
=1.0mA
=5.0mA
=1.0mA
=5.0mA
=1.0mA, f=1.0kHz
=20mA, f=100MHz
CE
=0
CE
=100μA, R
=10mA,
=10mA,
CE
=1.0V
=1.0V
=1.0V
=1.0V
=1.0V
B1
=3.0V
=3.0V
=1.0mA
C
E
S
=0
=0
=1.0kΩ,
DUAL TRANSISTOR
0.65
MIN
100
100
300
5.0
1.0
0.5
1.0
60
40
40
70
60
30
TYP MAX UNIT
0.20
0.30
0.85
0.95
300
400
200
QW-R218-015.a
6.0
4.0
8.0
8.0
5.0
50
50
10
40
35
35
50
5 of 5
×10
MHz
nA
nA
pF
pF
kΩ
μS
dB
ns
ns
ns
ns
V
V
V
V
V
-4