mx29lv033c Macronix International Co., mx29lv033c Datasheet - Page 7

• Manufacturer Part Number: mx29lv033c
• Description: 32m-bit [4m X 8] Equal Sector Flash Memory
• Manufacturer: Macronix International Co.

MX29LV033C
WRITE COMMANDS/COMMAND SEQUENCES
To write a command to the device, system must drive WE# and CE# to Vil, and OE# to Vih. In a command cycle, all
address are latched at the later falling edge of CE# and WE#, and all data are latched at the earlier rising edge of CE#
and WE#.
Figure 1 illustrates the AC timing waveform of a write command, and Table 3 defines all the valid command sets of the
device. System is not allowed to write invalid commands not defined in this datasheet. Writing an invalid command will
bring the device to an undefined state.
REQUIREMENTS FOR READING ARRAY DATA
Read array action is to read the data stored in the array. While the memory device is in powered up or has been reset,
it will automatically enter the status of read array. If the microprocessor wants to read the data stored in the array, it has
to drive CE# (device enable control pin) and OE# (Output control pin) as Vil, and input the address of the data to be
read into address pin at the same time. After a period of read cycle (Tce or Taa), the data being read out will be
displayed on output pin for microprocessor to access. If CE# or OE# is Vih, the output will be in tri-state, and there will
be no data displayed on output pin at all.
After the memory device completes embedded operation (automatic Erase or Program), it will automatically return to
the status of read array, and the device can read the data in any address in the array. In the process of erasing, if the
device receives the Erase suspend command, erase operation will be stopped temporarily after a period of time no
more than Tready1 and the device will return to the status of read array. At this time, the device can read the data
stored in any address except the sector being erased in the array. In the status of erase suspend, if user wants to read
the data in the sectors being erased, the device will output status data onto the output. Similarly, if program command
is issued after erase suspend, after program operation is completed, system can still read array data in any address
except the sectors to be erased.
The device needs to issue reset command to enable read array operation again in order to arbitrarily read the data in
the array in the following two situations:
1. In program or erase operation, the programming or erasing failure causes Q5 to go high.
2. The device is in auto select mode or CFI mode.
In the two situations above, if reset command is not issued, the device is not in read array mode and system must
issue reset command before reading array data.
ACCELERATED PROGRAM OPERATION
The accelerated program can improve programming performance compared with byte program. By applying Vhv on
ACC pin, the device will enter accelerated program and draw current no more than Icw from ACC pin. Removing the
Vhv from ACC pin will put the device back to normal operation (not accelerated).
P/N:PM1189
REV. 1.5, FEB. 25, 2008
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