BT134-F SEMIWELL [SemiWell Semiconductor], BT134-F Datasheet

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BT134-F

Manufacturer Part Number
BT134-F
Description
Bi-Directional Triode Thyristor
Manufacturer
SEMIWELL [SemiWell Semiconductor]
Datasheet
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ High Commutation dv/dt
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay.
Absolute Maximum Ratings
Nov, 2003. Rev. 0
Symbol
I
P
V
T(RMS)
T
I
P
V
G(AV)
I
TSM
DRM
I
GM
T
STG
GM
GM
2
J
SemiWell
t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Semiconductor
Parameter
T(RMS)
= 4 A )
( T
J
= 25°C unless otherwise specified )
T
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t = 10ms
Over any 20ms period
C
= 104 °C
Condition
Symbol
TO-126
Preliminary
- 40 ~ 125
- 40 ~ 150
3
Ratings
1.T1
2
25/27
600
3.1
0.5
1
4
5
2
5
BT134-F
▼ ▲
2.T2
3.Gate
Units
A
°C
°C
W
W
V
A
A
A
V
2
s
1/6

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BT134-F Summary of contents

Page 1

... Nov, 2003. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 25°C unless otherwise specified ) J Condition T = 104 °C C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t = 10ms Over any 20ms period Preliminary BT134-F Symbol 2.T2 ○ ▼ ▲ ○ 3.Gate 1.T1 ○ TO-126 Ratings Units ...

Page 2

... BT134-F Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage TM + Ⅰ I GT1 - Ⅱ I GT1 Gate Trigger Current - Ⅲ I GT3 + Ⅳ I GT3 + Ⅰ V GT1 - Ⅱ V GT1 Gate Trigger Voltage - Ⅲ V GT3 + Ⅳ V GT3 V Non-Trigger Gate Voltage GD Critical Rate of Rise Off-State ...

Page 3

... Conduction Angle 100 Fig 6. Gate Trigger Voltage vs 0 -50 10 BT134-F o 125 1.0 1.5 2.0 2.5 On-State Voltage [V] Allowable Case Temperature θ θ π π 2 θ θ θ θ = 120 360° ...

Page 4

... BT134-F Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 - Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ A ● ● Test Procedure Ⅰ 4 GT1 - I GT1 GT3 + I GT3 -1 10 100 150 10Ω 10Ω ▼ ▲ ...

Page 5

... K 0.7 L φ Typ. Max. Min. 7.9 0.295 11.2 0.425 14.7 0.559 2.9 0.106 3.8 2.5 1.5 0.047 2.3 4.6 0.62 0.019 0.86 0.028 1.4 3 φ BT134-F Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.126 L 1. Gate 5/6 ...

Page 6

... 6/6 mm Typ. Max. 7.9 0.295 11.2 0.425 14.7 0.559 2.9 0.106 3.8 2.5 1.5 0.047 2.3 4.6 0.62 0.019 0.86 0.028 1.4 5.0 3 φ BT134-F Inch Min. Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.197 0.126 L 1. Gate ...

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