C103B CENTRAL [Central Semiconductor Corp], C103B Datasheet
C103B
Manufacturer Part Number
C103B
Description
SILICON CONTROLLED RECTIFIER
Manufacturer
CENTRAL [Central Semiconductor Corp]
Datasheet
1.C103B.pdf
(2 pages)
DESCRIPTION
The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for
control systems and sensing circuit applications.
MAXIMUM RATINGS (T C =25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (T C =60°C)
Peak One Cycle Surge
Peak Forward Gate Current
Peak Reverse Gate Voltage
Peak Gate Power Dissipation (tp=8.3ms)
Average Gate Power Dissipation
Storage Temperature
Junction Temperature
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise noted)
SYMBOL
I DRM , I RRM
I DRM , I RRM
I GT
I GT
I H
I H
V GT
V GT
V GT
V TM
dv/dt
TEST CONDITIONS
Rated V DRM , V RRM , R GK =1KΩ
Rated V DRM , V RRM , T C =125°C, R GK =1KΩ
V D =6.0V, R L =100Ω, R GK =1KΩ
V D =6.0V, R L =100Ω, R GK =1KΩ, T C =-65°C
R GK =1KΩ
R GK =1KΩ, T C =-65°C
V D =6.0V, R L =100Ω
V D =6.0V, R L =100Ω, T C =-65°C
V D =6.0V, R L =1KΩ, T C =125°C
I TM =1.0A
V D =V DRM , T C =125°C, R GK =1KΩ
SYMBOL
V DRM, V RRM
I T(RMS)
I TSM
I GM
V GM
P GM
P G(AV)
T stg
T J
(SEE REVERSE SIDE)
C103Y
30
SILICON CONTROLLED RECTIFIER
C103YY
0.8 AMP, 30 THRU 200 VOLTS
60
MIN
0.1
-65 to +150
-65 to +125
0.8
8.0
0.5
8.0
1.0
0.01
TO-92 CASE
TYP
20
C103A
C103YY
C103A
C103B
C103Y
100
MAX
200
500
1.0
5.0
0.8
1.0
1.5
50
10
C103B
200
DATA SHEET
UNITS
UNITS
V/µs
°C
°C
µA
µA
µA
µA
mA
mA
V
A
A
A
V
W
W
V
V
V
V
R0
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C103B Summary of contents
Page 1
... C103YY V DRM, V RRM T(RMS) I TSM G(AV) T stg -65 to +150 T J -65 to +125 MIN 0.1 (SEE REVERSE SIDE) DATA SHEET C103Y C103YY C103A C103B TO-92 CASE C103A C103B UNITS 100 200 V 0.8 A 8.0 A 0.5 A 8.0 V 1.0 W 0.01 W °C °C TYP MAX UNITS µA 1.0 µ ...
Page 2
C103 SERIES TO-92 PACKAGE - MECHANICAL OUTLINE SYMBOL A (DIA SILICON CONTROLLED RECTIFIER DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 B 0.170 0.210 ...