TC4404 TELCOM [TelCom Semiconductor, Inc], TC4404 Datasheet - Page 2

• Manufacturer Part Number: TC4404
• Description: 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
• Manufacturer: TELCOM [TelCom Semiconductor, Inc]

TC4404
TC4405
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Maximum Chip Temperature ................................. +150 C
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
4-220
thus minimizing chip count. Unused open drains should be
returned to the supply rail that their device sources are
connected to (pull-downs to ground, pull-ups to V
prevent static damage. In addition, in situations where
timing resistors or other means of limiting crossover currents
are used, like drains may be paralleled for greater current
carrying capacity.
manding electrical environments. They will not latch up
under any conditions within their power and voltage rat-
ings; they are not subject to damage when up to 5V of
noise spiking of either polarity occurs on their ground pin;
and they can accept, without damage or logic upset, up to
1/2 amp of reverse current (of either polarity) being forced
back into their outputs. All terminals are fully protected
against up to 2 kV of electrostatic discharge.
ELECTRICAL CHARACTERISTICS:
Specifications measured at T
Symbol
Input
V
V
I
Output
V
V
R
I
I
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
NOTE:
IN
PK
DC
R
R
F
D1
D2
S
IH
IL
OH
OL
O
These devices are built to operate in the most de-
1. Switching times guaranteed by design.
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current (Any Drain)
Continuous Output Current (Any Drain)
Latch-Up Protection (Any Drain)
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
A
= +25 C with 4.5V
Test Conditions
– 0V
I
Duty cycle < 2%, t
Duty cycle < 2%, t
Figure 1, C
Figure 1, C
Figure 1, C
Figure 1, C
V
V
OUT
IN
IN
= 3V (Both Inputs)
= 0V (Both Inputs)
= 10 mA, V
V
DD
V
IN
DD
), to
L
L
L
L
= 1000 pF
= 1000 pF
= 1000 pF
= 1000 pF
V
DD
DD
18V, unless otherwise specified.
= 18V; Any Drain
Package Thermal Resistance
Operating Temperature Range
Package Power Dissipation (T
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
300 sec
300 sec
CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R
C Version ............................................... 0 C to +70 C
E Version .......................................... – 40 C to +85 C
M Version ....................................... – 55 C to +125 C
Plastic ............................................................. 730mW
CerDP ............................................................. 800mW
SOIC ............................................................... 470mW
J-A
J-C
J-A
J-C
J-A
J-C
.................................................. 125 C/W
.................................................... 45 C/W
.................................................. 155 C/W
.................................................... 45 C/W
V
............................................... 150 C/W
................................................. 55 C/W
DD
1.5A DUAL OPEN-DRAIN
> 500
Min
TELCOM SEMICONDUCTOR, INC.
2.4
– 1
– 0.025
—
—
—
—
—
—
—
—
—
—
—
MOSFET DRIVERS
A
Typ
1.5
25
25
15
32
70 C)
—
—
—
—
—
—
—
—
—
7
0.025
Max
100
0.8
4.5
0.4
10
30
30
30
50
—
—
—
—
1
Unit
V
V
V
V
A
mA
mA
nsec
nsec
nsec
nsec
mA
A