TC4428A TELCOM [TelCom Semiconductor, Inc], TC4428A Datasheet - Page 2

• Manufacturer Part Number: TC4428A
• Description: 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
• Manufacturer: TELCOM [TelCom Semiconductor, Inc]

ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
V
I
Output
V
V
R
I
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
NOTE: 1. Switching times are guaranteed by design.
4-252
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B .. (V
Maximum Chip Temperature ................................. +150 C
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
Package Thermal Resistance
TC4426A
TC4427A
TC4428A
IN
PK
REV
R
F
D1
D2
S
IH
IL
OH
OL
O
CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R
J-A
J-C
J-A
J-C
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current t
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
J-A
J-C
................................................... 125 C/W
..................................................... 42 C/W
................................................... 155 C/W
..................................................... 45 C/W
................................................ 150 C/W
.................................................. 50 C/W
DD
+ 0.3V) to (GND – 5.0V)
Test Conditions
– 0V
DC Test
DC Test
V
V
Duty Cycle
Figure 1
Figure 1
Figure 1
Figure 1
V
V
DD
DD
IN
IN
300 sec
= 3V (Both Inputs)
= 0V (Both Inputs)
= 18V, I
= 18V
V
IN
Over operating temperature range with 4.5V
otherwise specified.
O
V
2%
= 10mA
DD
Operating Temperature Range
Package Power Dissipation (T
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Min
T
– 40 C
T
0 C
– 40
V
T
0 C
– 40 C
T
0 C
– 40 C
T
0 C
– 40 C
T
0 C
– 40 C
V
A
A
A
A
A
A
DD
DD
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C
C Version ............................................... 0 C to +70 C
E Version .......................................... – 40 C to +85 C
M Version ....................................... – 55 C to +125 C
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
= 18V
= 18V
T
T
T
T
T
A
T
A
A
A
A
A
T
T
T
T
T
A
A
A
A
A
70 C
70 C
70 C
70 C
70 C
85 C
85 C
85 C
85 C
85 C
85 C
POWER MOSFET DRIVERS
V
1.5A DUAL HIGH-SPEED
TELCOM SEMICONDUCTOR, INC.
DD
Typ
– 10
2.4
– 1
– 0.025
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
A
V
70 C)
Max
DD
1.5
1.0
0.1
—
25
27
29
25
27
29
30
33
35
30
33
35
—
—
—
—
—
—
7
7
8
18V, unless
0.025
Unit
0.8
2.0
0.2
10
10
11
35
40
40
35
40
40
35
40
45
35
40
45
—
—
—
—
1
9
V
V
V
A
A
nsec
nsec
nsec
nsec
mA
V
A