IRF2907ZS-7PPBF_06 IRF [International Rectifier], IRF2907ZS-7PPBF_06 Datasheet
![no-image](/images/no-image-200.jpg)
IRF2907ZS-7PPBF_06
Manufacturer Part Number
IRF2907ZS-7PPBF_06
Description
Manufacturer
IRF [International Rectifier]
Datasheet
1.IRF2907ZS-7PPBF_06.pdf
(11 pages)
Features
l
l
l
l
l
HEXFET
Description
Specifically designed for high current, high reliability
applications, this HEXFET
lizes the latest processing techniques and advanced
packaging technology to achieve extremely low on-
resistance and world -class current ratings. Addi-
tional features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
®
Power MOSFET uti-
j
j
Parameter
Parameter
GS
GS
GS
g
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
IRF2907ZS-7PPbF
h
G
ij
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
S
D
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
-55 to + 175
Max.
180
120
160
700
300
± 20
160
410
2.0
®
R
Power MOSFET
DS(on)
Max.
0.50
–––
V
62
40
I
DSS
D
= 160A
PD - 97031C
= 3.8mΩ
= 75V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1