FS14KM-12A MITSUBISHI [Mitsubishi Electric Semiconductor], FS14KM-12A Datasheet - Page 2

• Manufacturer Part Number: FS14KM-12A
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
y
C
C
C
t
t
t
t
V
R
Symbol
GSS
DSS
DS (ON)
d (on)
r
d (off)
f
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
50
40
30
20
10
50
40
30
20
10
POWER DISSIPATION DERATING CURVE
0
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
50
V
GS
(TYPICAL)
= 20V,10V,8V
20
100
(Tch = 25°C)
30
6V
I
I
V
V
I
I
I
I
V
V
I
Channel to case
D
GS
D
D
D
D
S
GS
DS
DS
DD
= 7A, V
= 1mA, V
= 1mA, V
= 7A, V
= 7A, V
= 7A, V
= ±100µA, V
150
= ±25V, V
= 600V, V
= 25V, V
= 200V, I
T
Pulse Test
P
C
C
40
D
= 25°C
(°C)
= 40W
DS
GS
GS
GS
DS
5V
GS
DS
(V)
= 10V
GS
= 0V
= 10V
= 10V
D
200
GS
DS
50
= 0V
= 10V
= 7A, V
= 0V, f = 1MHz
DS
= 0V
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
20
16
12
–1
8
4
0
= R
7
5
3
2
1
7
5
3
2
0
7
5
3
2
7
5
3
2
2
0
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
GS
T
Single Pulse
3
C
OUTPUT CHARACTERISTICS
= 50Ω
= 25°C
5 7
MITSUBISHI Nch POWER MOSFET
4
10
1
HIGH-SPEED SWITCHING USE
(TYPICAL)
2
8
3
Min.
600
±30
2.5
9.0
—
—
—
—
—
—
—
—
—
—
—
—
—
V
GS
5 7
12
= 20V,10V,8V,6V
10
FS14KM-12A
Limits
2
2350
0.46
3.22
15.0
Typ.
210
310
3.0
1.5
50
35
50
70
—
—
—
—
—
P
T
Pulse Test
D
C
16
2
= 40W
= 25°C
tw =
10µs
DS
DS
100µs
3
1ms
DC
10
5V
ms
(V)
(V)
5
Max.
0.60
4.20
3.13
±10
20
3.5
2.0
—
—
—
—
—
—
—
—
—
—
7
1
Sep. 2001
°C/W
Unit
mA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
V
V
S
V