BZX384-B12 NXP [NXP Semiconductors], BZX384-B12 Datasheet - Page 8

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BZX384-B12

Manufacturer Part Number
BZX384-B12
Description
Voltage regulator diodes
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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NXP Semiconductors
GRAPHICAL DATA
2004 Mar 22
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
(1) T
(2) T
Fig.2
BZX384-B/C2V4 to B/C4V3.
T
Fig.4
P ZSM
j
S Z
(W)
= 25 to 150 °C.
10
10
10
−1
−2
−3
j
j
0
1
10
3
2
= 25 °C (prior to surge).
= 150 °C (prior to surge).
0
−1
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Temperature coefficient as a function of
working current; typical values.
20
1
(1)
(2)
4V3
duration (ms)
40
3V9
2V4
2V7
3V3
I Z (mA)
3V6
MBG801
MBG783
3V0
10
60
8
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.3
BZX384-B/C4V7 to B/C12.
T
Fig.5
j
j
S Z
(mA)
= 25 °C.
= 25 to 150 °C.
I F
300
200
100
10
−5
5
0
0
0.6
0
Forward current as a function of forward
voltage; typical values.
Temperature coefficient as a function of
working current; typical values.
4
8
9V1
8V2
7V5
6V8
0.8
12
11
10
12
BZX384 series
6V2
5V6
5V1
4V7
V F (V)
Product data sheet
16
I Z (mA)
MBG782
MBG781
20
1

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