SI1551DL-T1 VISHAY [Vishay Siliconix], SI1551DL-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1551DL-T1
• Description: Complementary 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

www.vishay.com
Si1551DL
Vishay Siliconix
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.1
5
4
3
2
1
0
1
−50
0.0
0.0
V
I
D
−25
Source-Drain Diode Forward Voltage
DS
= 0.41 A
0.1
0.2
= 10 V
V
SD
0
Q
g
T
Threshold Voltage
− Source-to-Drain Voltage (V)
0.2
0.4
J
− Total Gate Charge (nC)
T
− Temperature (_C)
J
25
= 150_C
Gate Charge
0.3
0.6
50
I
D
= 250 mA
75
0.4
0.8
100
T
J
0.5
1.0
= 25_C
125
150
0.6
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
10
−50
0
−3
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
10
= 0.41 A
−2
= 4.5 V
1
T
V
0
J
GS
10
− Junction Temperature (_C)
−1
− Gate-to-Source Voltage (V)
Single Pulse Power
25
Time (sec)
2
50
1
S-42353—Rev. C, 20-Dec-04
Document Number: 71255
I
3
D
75
10
= 0.41 A
P−CHANNEL
100
4
100
125
600
150
5