nup2201 ON Semiconductor, nup2201 Datasheet - Page 2

• Manufacturer Part Number: nup2201
• Description: Low Capacitance Tsop-6 Diode-tvs Array For High Speed Data Lines Protection
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
2. TVS devices are normally selected according to the working peak reverse voltage (V
3. V
4. Non−repetitive current pulse per Figure 1 (Pin 5 to Pin 2)
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
or continuous peak operating voltage level.
Figure 3. Junction Capacitance vs Reverse Voltage
100
90
80
70
60
50
40
30
20
10
BR
0
0
0
is measured at pulse test current I
Parameter
25
Figure 1. Pulse Derating Curve
1
50
V
T
BR
A
, AMBIENT TEMPERATURE (°C)
, REVERSE VOLTAGE (V)
75
2
I/O lines
I/O−Ground
Symbol
100
V
V
RWM
V
V
I
C
C
I
PP
BR
R
C
C
J
J
(T
3
T
125
.
J
TYPICAL PERFORMANCE CURVES
=25°C unless otherwise specified)
(Note 2)
I
V
I
I
8x20 ms Waveform
V
V
T
PP
PP
RWM
R
R
=1 mA, (Note 3)
= 0 V, f=1 MHz between I/O Pins and GND
= 0 V, f=1 MHz between I/O Pins
= 5 A (Note 4)
= 8 A (Note 4)
150
(T
= 5 V
J
4
= 25°C unless otherwise noted)
175
http://onsemi.com
NUP2201MR6
Conditions
200
5
2
100
90
80
70
60
50
40
30
20
10
Figure 4. Clamping Voltage vs. Peak Pulse Current
20
18
16
14
12
10
0
8
6
4
2
0
0
0
t
r
Figure 2. 8 × 20 ms Pulse Waveform
t
P
RWM
10
PEAK VALUE I
), which should be equal or greater than the DC
20
(8 x 20 ms Waveform)
PEAK PULSE CURRENT (A)
HALF VALUE I
Min
6.0
20
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
t, TIME (ms)
RSM
40
@ 8 ms
Typ
3.0
1.5
30
RSM
/2 @ 20 ms
P
) IS DEFINED
60
Max
12.5
5.0
5.0
5.0
3.0
40
20
25
Unit
mA
pF
pF
V
V
V
V
A
50
80