N0100P-T1-AT RENESAS [Renesas Technology Corp], N0100P-T1-AT Datasheet

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N0100P-T1-AT

Manufacturer Part Number
N0100P-T1-AT
Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N0100P-T1-AT
Manufacturer:
MDC
Quantity:
20 000
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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N0100P-T1-AT Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... MAX. (V DS(on −1 105 mΩ MAX. (V DS(on)4 GS • Built-in gate protection diode ORDERING INFORMATION PART NUMBER LEAD PLATING N0100P-T1-AT Pure Sn (Tin) Marking: XX ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) ...

Page 4

... DS DS 10% 10% 10% 10 d(on) d(on) d(off) d(off off off Data Sheet D20203EJ1V0DS N0100P MIN. TYP. MAX. UNIT − μ μ − − 0.45 1 mΩ mΩ mΩ 60 105 mΩ ...

Page 5

... T = 25°C A Single Pulse -100 2 Mounted on 2500 mm Coper Pad Connected to Drain Electrode 10 m 100 Pulse Width - s Data Sheet D20203EJ1V0DS N0100P 2 μ Mounted on 2500 Coper Pad Connected to Drain Electrode, t ≤ 5 sec 50 75 100 125 150 175 - Ambient Temperature - °C ...

Page 6

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 –2 Pulsed Pulsed 0 100 150 0 Data Sheet D20203EJ1V0DS N0100P T = –25°C A 25°C 75°C 125° Gate to Source Voltage - – –25°C = –25° 25°C 75°C 125° ...

Page 7

... Gate Change - nC G SWITCHING CHARACTERISTICS 1000 100 – –4 Ω -100 -0 Drain Current - A D SOURCE TO DRAIN DIODE FORWARD VOLTAGE -100 Pulsed - -0.1 -0.01 -100 0.0 0 Source to Drain Voltage - V F(S-D) Data Sheet D20203EJ1V0DS N0100P t d(off d(on) -10 -100 1.0 1.5 5 ...

Page 8

... Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority- owned subsidiaries. (Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). N0100P (M8E0909E) ...

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