IR2214 IRF [International Rectifier], IR2214 Datasheet - Page 24

• Manufacturer Part Number: IR2214
• Description: HALF-BRIDGE GATE DRIVER IC
• Manufacturer: IRF [International Rectifier]

IR2214/IR22141(SS)
24
Sizing the turn-on gate resistor
For the matters of the calculation included here-
after, the switching time t
spent to reach the end of the plateau voltage (a
total Q
To obtain the desired switching time the gate
resistance can be sized starting from Q
Q
and
where
R
R
gc
Switching-time
Gon
DRp
, Vcc, V
= gate on-resistor
= driver equivalent on-resistance
gc
+Q
R
TOT
ge
ge
has been provided to the IGBT gate).
Figure 21: R
*
I
avg
R
(see figure 21):
R
TOT
R
DRp
Vcc/Vb
DRp
R
COM/Vs
Q
Gon
gc
Vcc
t
R
sw
sw
I
Gon
Gon
is defined as the time
Q
avg
I
avg
C
ge
V
sizing
RES
ge
*
ge
and
ADVANCE DATA
Table 1 reports the gate resistance size for two
commonly used IGBTs (calculation made using
typical datasheet values and assuming
Vcc=15V).
Turn-on gate resistor R
trol output slope
While the output voltage has a non-linear
behaviour, the maximum output slope can be ap-
proximated by:
inserting the expression yielding I avg and
rearranging:
As an example, table 2 shows the sizing of gate
resistance to get dV
popular IGBTs, typical datasheet values and
assuming Vcc=15V.
NOTICE: Turn on time must be lower than T
avoid improper desaturation detection and SSD
triggering.
R
When R
(I
Output voltage slope
DRp
O1+
,I
O2+
t
t
on
SW
Gon
R
1
and t
TOT
> 7 Ohm, R
Vcc
I
o
1
dV
on1
dt
(dV
C
Vcc
from the IR2214 datasheet).
out
I
Vcc
I
o
Vcc
RESoff
1
o
out
2
OUT
/dt=5V/ns when using two
t
Gon
t
C
DRp
/dt)
SW
on
I
1
RESoff
V
dV
avg
can be sized to con-
is defined by
ge
.
dt
1
*
out
when
when
www.irf.com
t
t
SW
SW
BL
t
t
to
on
on
1
1